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  1. No Access

    Article

    Si Nanocrystals as Sensitizers for Er PL in SiO2

    Sensitization of Er3+ photoluminescence in SiO2 layers by silicon nanocrystals has been investigated under resonant and nonresonant pulsed optical pum**. We observed that the very efficient channel of erbium ex...

    M. Forcales, M. Wojdak, M. A. J. Klik, T. Gregorkiewicz… in MRS Online Proceedings Library (2003)

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    Chapter

    Efficient Electroluminescence In Alloyed Silicon Diodes

    Recently the interest to electroluminescence (EL) of silicon at room temperature has considerably increased. This is caused by the need to develop an optoelectronics compatible with conventional silicon techno...

    O. B. Gusev, M. S. Bresler, I. N. Yassievich… in Towards the First Silicon Laser (2003)

  3. No Access

    Chapter

    Excitation Mechanism of Er Photoluminescence in Bulk Si And SiO2 With Nanocrystals

    For about one decade, Er doped Si attracted the attention of researchers with the aim to apply it to integrated silicon-based optoelectronic devices. In fact, Er emission falls into the band of minimum absorpt...

    I. N. Yassievich, A. S. Moskalenko, O. B. Gusev… in Towards the First Silicon Laser (2003)

  4. No Access

    Chapter

    Smbe Grown Uniformly And Selectively Doped Si:Er Structures For Leds And Lasers

    In recent years an increasing attention has been focused on the investigation of optically active Er centers in Si in view of great application possibilities opened for this material. The intra-center emission...

    Z. F. Krasilnik, V. Ya. Aleshkin, B. A. Andreev… in Towards the First Silicon Laser (2003)

  5. No Access

    Article

    Photo- and Electroluminescence Study of Excitation Mechanism of Er Luminescence in a-Si: H(Er)

    Photo- and electroluminescence were studied in erbium-doped amorphous hydrogenated silicon films. A mechanism of excitation of erbium ions by defect-related Auger process is proposed which permits to explain c...

    I. N. Yassievich, O. B. Gusev, M. S. Bresler, W. Fuhs… in MRS Online Proceedings Library (1996)

  6. No Access

    Article

    Defect Engineering in Si:Er Technology

    Recent results contributing to our understanding of mechanisms of defect formation and excitation of Er luminescence in Si:Er system are presented. An essential role of non-equilibrium intrinsic point defects ...

    N. A. Sobolev, O. V. Alexandrov, M. S. Bresler… in MRS Online Proceedings Library (1996)

  7. No Access

    Article

    Photolumi Nescence of Inas/InAsPSb and InAs/Heterojunctions

    Photol uminescence of p-P InAs/InAsPSb and InAs/InAl AsSb heterojunctions grown by LPE method was studied at liquid helium temperature. The recombination spectra contained a new broad band lying between the su...

    A. N. Baranov, M. S. Bresler, O. B. Gusev, K. D. Moiseev… in MRS Online Proceedings Library (1990)