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Article
Photolumi Nescence of Inas/InAsPSb and InAs/Heterojunctions
Photol uminescence of p-P InAs/InAsPSb and InAs/InAl AsSb heterojunctions grown by LPE method was studied at liquid helium temperature. The recombination spectra contained a new broad band lying between the su...
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Article
Photo- and Electroluminescence Study of Excitation Mechanism of Er Luminescence in a-Si: H(Er)
Photo- and electroluminescence were studied in erbium-doped amorphous hydrogenated silicon films. A mechanism of excitation of erbium ions by defect-related Auger process is proposed which permits to explain c...
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Article
Defect Engineering in Si:Er Technology
Recent results contributing to our understanding of mechanisms of defect formation and excitation of Er luminescence in Si:Er system are presented. An essential role of non-equilibrium intrinsic point defects ...
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Article
Si Nanocrystals as Sensitizers for Er PL in SiO2
Sensitization of Er3+ photoluminescence in SiO2 layers by silicon nanocrystals has been investigated under resonant and nonresonant pulsed optical pum**. We observed that the very efficient channel of erbium ex...