Skip to main content

and
  1. No Access

    Article

    Photolumi Nescence of Inas/InAsPSb and InAs/Heterojunctions

    Photol uminescence of p-P InAs/InAsPSb and InAs/InAl AsSb heterojunctions grown by LPE method was studied at liquid helium temperature. The recombination spectra contained a new broad band lying between the su...

    A. N. Baranov, M. S. Bresler, O. B. Gusev, K. D. Moiseev in MRS Online Proceedings Library (1990)

  2. No Access

    Article

    Photo- and Electroluminescence Study of Excitation Mechanism of Er Luminescence in a-Si: H(Er)

    Photo- and electroluminescence were studied in erbium-doped amorphous hydrogenated silicon films. A mechanism of excitation of erbium ions by defect-related Auger process is proposed which permits to explain c...

    I. N. Yassievich, O. B. Gusev, M. S. Bresler, W. Fuhs in MRS Online Proceedings Library (1996)

  3. No Access

    Article

    Defect Engineering in Si:Er Technology

    Recent results contributing to our understanding of mechanisms of defect formation and excitation of Er luminescence in Si:Er system are presented. An essential role of non-equilibrium intrinsic point defects ...

    N. A. Sobolev, O. V. Alexandrov, M. S. Bresler in MRS Online Proceedings Library (1996)

  4. No Access

    Article

    Si Nanocrystals as Sensitizers for Er PL in SiO2

    Sensitization of Er3+ photoluminescence in SiO2 layers by silicon nanocrystals has been investigated under resonant and nonresonant pulsed optical pum**. We observed that the very efficient channel of erbium ex...

    M. Forcales, M. Wojdak, M. A. J. Klik, T. Gregorkiewicz in MRS Online Proceedings Library (2003)