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  1. No Access

    Article

    A 14-ps full width at half maximum high-speed photoconductor fabricated with intersecting InP nanowires on an amorphous surface

    We demonstrate a high-speed polarization-insensitive photoconductor based on intersecting InP nanowires synthesized between a pair of hydrogenated silicon electrodes deposited on amorphous SiO2 surfaces prepared ...

    V.J. Logeeswaran, A. Sarkar, M.S. Islam, N.P. Kobayashi, J. Straznicky… in Applied Physics A (2008)

  2. No Access

    Article

    Growth and characterization of indium phosphide single-crystal nanoneedles on microcrystalline silicon surfaces

    The epitaxial growth of nanometer-scale structures on non-single crystalline surfaces is proposed and demonstrated. Hydrogenated amorphous silicon was deposited onto an SiO2 surface by plasma-enhanced chemical va...

    N.P. Kobayashi, S.-Y. Wang, C. Santori, R.S. Williams in Applied Physics A (2006)

  3. No Access

    Article

    Formation and characterization of long-chained alkylsiloxane self-assembled monolayers on atomic-layer-deposited aluminum oxide surfaces

    We report the formation of highly robust long-chained alkylsiloxane self-assembled monolayers (SAMs) on aluminum oxide films prepared by atomic-layer deposition (ALD). The surface chemistry and the morphologic...

    A.A. Yasseri, N.P. Kobayashi, T.I. Kamins in Applied Physics A (2006)

  4. No Access

    Article

    InGaN/GaN quantum well growth on pyramids of epitaxial lateral overgrown GaN

    InGaN/GaN quantum wells (QW) were grown by metalorganic chemical vapor deposition (MOCVD) on pyramids of epitaxial lateral overgrown (ELO) GaN samples. The ELO GaN samples were grown by MOCVD on sapphire (0001...

    X. Zhang, P. D. Dapkus, D. H. Rich, I. Kim… in Journal of Electronic Materials (2000)

  5. No Access

    Article

    Carrier relaxation and recombination in InGaN/GaN quantum heterostructures probed with time-resolved cathodoluminescence

    Spatially, spectrally, and temporally resolved cathodoluminescence (CL) techniques have been employed to examine the optical properties and kinetics of carrier relaxation in InGaN/GaN heterostructure and singl...

    **ngang Zhang, D. H. Rich, J. T. Kobayashi… in MRS Online Proceedings Library (1998)

  6. No Access

    Article

    Initial Stages of MOCVD Growth of Gallium Nitride Using a Multi-Step Growth Approach

    A multilayer buffer layer approach to GaN growth has been developed in which the thermal desorption and mass transport of low temperature buffer layer are minimized by deposition of successive layers at increa...

    J. T. Kobayashi, N. P. Kobayashi, P. D. Dapkus, X. Zhang… in MRS Online Proceedings Library (1997)

  7. No Access

    Article

    Nucleation and growth behavior for GaN grown on (0001) sapphire via multistep growth approach

    Formation and coalescence of GaN truncated three dimensional islands (TTIs) on (0001) sapphire are observed during growth of GaN using a close spaced metalorganic chemical vapor deposition reactor. To encourag...

    J. T. Kobayashi, N. P. Kobayashi, P. D. Dapkus in Journal of Electronic Materials (1997)

  8. No Access

    Article

    The Formation and Evolution of InAs 3D Islands on GaAs(001) and a Comparative C-AFM and NC-AFM Study of InAs 3D Islands

    The two-dimensional (2D) to three-dimensional (3D) morphology change in the highly strained growth of InAs on GaAs(001) is examined via in-situ, ultra-high vacuum (UHV) scanning tunneling microscopy (STM) and con...

    T. R. Ramachandran, N. P. Kobayashi, R. Heitz, P. Chen… in MRS Online Proceedings Library (1996)

  9. No Access

    Article

    InAs Island Quantum Box Formation and Vertical Self-Organization on GaAs (100) Via Molecular Beam Epitaxy

    In-situ, ultra high vacuum combined scanning tunneling microscope/atomic force microscope (STM/AFM) studies were undertaken to examine the initiation of 3D InAs islands on GaAs (100) and their density and size di...

    Qianghua **e, N. P. Kobayashi, T. R. Ramachandran… in MRS Online Proceedings Library (1995)

  10. No Access

    Chapter

    Semiconductor Nanostructures: Nature’s Way

    The accumulated evidence for the formation of semiconductor nanostructures via purely growth approaches on (i) nonplanar patterned substrates, (ii) planar high index surfaces having built-in corrugation, and (...

    A. Madhukar, P. Chen, Q. **e, A. Konkar… in Low Dimensional Structures Prepared by Epi… (1995)