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  1. No Access

    Article

    On the Light Emission in GaN Based Heterostructures at High Injection

    For light emitting diodes (LEDs) to be used for general lighting, high efficiencies would need to be retained at high injection levels to meet the intensity and efficiency requirements. In this regard, it is i...

    X. Ni, X. Li, J. Lee, H. Y. Liu, N. Izyumskaya… in MRS Online Proceedings Library (2020)

  2. No Access

    Article

    Absence of Lateral Composition Fluctuations in Aberration-corrected STEM Images of an InGaN Quantum Well at Low Dose

    By using aberration corrected scanning transmission electron microscopy we have found no small scale lateral In composition fluctuations exist in the In0.15Ga0.85N active region of a light emitting diode. Images ...

    Andrew B. Yankovich, A. V. Kvit, X. Li, F. Zhang… in MRS Online Proceedings Library (2012)

  3. No Access

    Article

    Effect of Growth Conditions on Electronic and Structural Properties of GZO Films Grown by Plasma-enhanced Molecular Beam Epitaxy on p-GaN(0001)/Sapphire Templates

    We report on a strong effect of p-GaN surface morphology on the growth mode and surface roughness of ZnO:Ga films grown by plasma-assisted molecular-beam epitaxy on p-GaN/c-sapphire templates. A range of ZnO:G...

    H. Y. Liu, V. Avrutin, N. Izyumskaya, M. A. Reshchikov… in MRS Online Proceedings Library (2011)

  4. No Access

    Article

    Effect of growth conditions on structural and electrical properties of Ga-doped ZnO films grown by plasma-assisted MBE

    ZnO has recently attracted a great deal of attention as a material for transparent contacts in light emitters and adsorbers. ZnO films heavily doped with Ga (carrier concentration in the range of 1020–1021 cm−3) ...

    V. Avrutin, H.Y. Liu, N. Izyumskaya, M.A. Reshchikov… in MRS Online Proceedings Library (2009)

  5. No Access

    Article

    Visible Luminescence Related to Defects in ZnO

    We studied several photoluminescence (PL) bands in undoped, Li-, Ga-, and N-doped high-quality ZnO bulk crystals and thin films grown by molecular beam epitaxy (MBE). By analyzing PL in a wide range of excitat...

    Michael A. Reshchikov, B. Nemeth, J. Nause, J. **e… in MRS Online Proceedings Library (2008)

  6. No Access

    Article

    Effect of Growth Conditions on Structural and Electrical Properties of Pb(ZrxTi1-x)O3 layers grown by peroxide MBE

    Pb(ZrxTi1-x)O3 (PZT) films were grown by molecular beam epitaxy using hydrogen peroxide as a source of reactive oxygen. Phase composition as well as structural and electrical properties of the films were studied ...

    N. Izyumskaya, V. Avrutin, X. Gu, B. **ao, S. Chevtchenko… in MRS Online Proceedings Library (2007)