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    Using AlN Coatings to Protect the Surface of AlGaAs/GaAs System Heterostructures from Interaction with Atmospheric Oxygen

    Thin aluminum nitride (AlN) films have been synthesized by reactive ion–plasma sputtering (RIPS) and their properties have been studied in view of using this method for obtaining protective coatings on output ...

    E. V. Fomin, A. D. Bondarev, I. P. Soshnikiv, N. B. Bercu… in Technical Physics Letters (2020)