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  1. No Access

    Article

    Quantum dots of InAs/GaSb type II superlattice for infrared sensing

    Throughout the past years, significant progress has been made in Type II (InAs/GaSb) photovoltaic detectors in both LWIR and VLWIR ranges. BLIP performance at 60K for 16μm photovoltaic type II detectors has be...

    M. Razeghi, Y. Wei, A. Gin, G. J. Brown in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    Epitaxial Growth of Aluminum Nitride on Sapphire and Silicon

    The microstructural characteristics of wide band gap semiconductor, hexagonal A1N thin films on Si(100), (111), and sapphire (0001) and (10ī2) were studied by transmission electron microscopy (TEM) and x-ray d...

    K. Dovidenko, S. Oktyabrsky, J. Narayan, M. Razeghi in MRS Online Proceedings Library (2011)

  3. No Access

    Article

    Study of Thin Films Polarity of Group III Nitrides

    Thin films of GaN grown by MOCVD on (0001) sapphire were studied by transmission electron microscopy in order to correlate the observed extended defects with crystal polarity of the films. We propose relativel...

    K. Dovidenko, S. Oktyabrsky, J. Narayan, M. Razeghi in MRS Online Proceedings Library (2011)

  4. Article

    Study of Thin films Polarity of Group III Nitrides

    Thin films of GaN grown by MOCVD on (0001) sapphire were studied by transmission electron microscopy in order to correlate the observed extended defects with crystal polarity of the films. We propose relativel...

    K. Dovidenko, S. Oktyabrsky, J. Narayan… in MRS Internet Journal of Nitride Semiconduc… (1999)

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  5. Article

    GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

    We report the growth, fabrication and characterization of GaInN/GaN multi-quantum well lasers grown on (00.1) sapphire substrates by low pressure metalorganic chemical vapor deposition. The threshold current d...

    P. Kung, A. Saxler, D. Walker… in MRS Internet Journal of Nitride Semiconduc… (1998)

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  6. No Access

    Article

    Comparative Study of Typical Defects in III-Nitride Thin Films and Their Alloys

    The microstructure and typical defects in GaN and GaN/GaAlN thin film heterostructures grown on (0001)α-A12O3 were investigated using different transmission electron microscopy (TEM) techniques including diffract...

    K. Dovidenko, S. Oktyabrsky, J. Narayan, V. Joshkjn… in MRS Online Proceedings Library (1997)

  7. No Access

    Article

    AlxGa1−xN-Based Materials and Heterostructures

    We present the metalorganic chemical vapor deposition growth, n-type and p-type do** and characterization of AlxGa1−xN alloys on sapphire substrates. We report the fabrication of Bragg reflectors and the demons...

    P. Kung, A. Saxler, D. Walker, X. Zhang, R. Lavado… in MRS Online Proceedings Library (1996)

  8. No Access

    Article

    High Resolution X-ray Diffraction of GaN Grown on Sapphire Substrates

    X-ray rocking curves are frequently used to assess the structural quality of GaN thin films. In order to understand the information given by the line shape, we need to know the primary mechanism by which the c...

    A. Saxler, M. A. Capano, W. C. Mitchel, P. Kung, X. Zhang… in MRS Online Proceedings Library (1996)

  9. No Access

    Article

    InSb Detectors and Focal Plane Arrays on GaAs, Si, and Al203 Substrates

    In this paper, we report on the growth and fabrication of InSb detectors and Focal Plane Arrays (FPA’s) on (100) Si, Al203, and (100) and (111) GaAs substrates for infrared (IR) imaging. Several advantages result...

    E. Michel, H. Mohseni, J. Wojkowski, J. Sandven, J. Xu… in MRS Online Proceedings Library (1996)

  10. No Access

    Article

    High Power InAsSb/InAsSbP Laser Diodes Emitting at 3 ∼ 5 μm Range

    We report metalorganic chemical vapor deposition-grown double heterostructure and multiple quantum well InAsSb/InAsSbP laser diodes emitting at 3 to 4 μm and light emitting diodes up to 5 μm. Maximum output po...

    M. Razeghi, J. Diaz, H. J. Yi, D. Wu, B. Lane… in MRS Online Proceedings Library (1996)

  11. No Access

    Article

    GaAs/GaInP Quantum Well Intersubband Photodetectors for Focal Plane Array Infrared Imaging

    We demonstrate long wavelength quantum well infrared photodetectors (QWIP) with GaAs quantum wells and GalnP barriers grown using gas-source molecular beam epitaxy. Wafers were grown with varying well widths. ...

    C. Jelen, S. Slivken, G. J. Brown, M. Razeghi in MRS Online Proceedings Library (1996)

  12. No Access

    Article

    Growth and Characterization of BRS GaInAsP-GaAs Laser Emitting at 0.8µm by Gas-Source Molecular Beam Epitaxy

    GaInAsP-GaAs buried ridge structure lasers emitting at 0.8µm have been fabricated on material grown in two steps by low pressure metalorganic chemical vapor deposition and gas-source molecular beam epitaxy. Pr...

    C. Jelen, S. Slivken, J. Diaz, M. Erdtmann, S. Kim, D. Wu… in MRS Online Proceedings Library (1995)

  13. No Access

    Article

    Growth of GaN without Yellow Luminescence

    We report the growth and photoluminescence characterization of GaN grown on different substrates and under different growth conditions using metalorganic chemical vapor deposition. The deep-level yellow lumine...

    X. Zhang, P. Kung, D. Walker, A. Saxler, M. Razeghi in MRS Online Proceedings Library (1995)

  14. No Access

    Article

    Spectral Response of GaN P-N Junction Photovoltaic Structures

    GaN ultraviolet photovoltaic and photoconductive detectors were grown on sapphire substrates by metalorganic chemical vapor deposition. The spectral response was analyzed considering the detector structure of ...

    D. Walker, X. Zhang, P. Kung, A. Saxler, J. Xu… in MRS Online Proceedings Library (1995)

  15. No Access

    Article

    The Microstructural Study of Aluminum Nitride Thin Films: Epitaxy on the Two Orientations of Sapphire and Texturing on Si

    The microstructural study of wide-band gap semiconductor AlN thin films grown on (0001) and (1012) sapphire and (111), (100) Si was carried out using plan-view and cross-sectional high-resolution electron micr...

    K. DOVIDENKO, S. OKTYABRSKY, J. NARAYAN, M. RAZEGHI in MRS Online Proceedings Library (1995)

  16. No Access

    Article

    High-Quality InSb Growth on GaAs and Si by Low-Pressure Metalorganic Chemical Vapor Deposition

    We report the first InSb film growth on Si by low-pressure metalorganic chemical vapor deposition. High-quality layers of InSb have been grown on Si and GaAs substrates. InSb films displayed mirror-like morpho...

    Y. H. Choi, R. Sudharsanan, C. Besikci, E. Bigan… in MRS Online Proceedings Library (1992)

  17. No Access

    Article

    Growth of InSb/GaAs Layers on YIG-Coated GGG Substrate

    We report the first growth of InSb and GaAs epilayers upon a garnet (YIG = Y3Fe5O12) epilayer. The YIG was deposited using liquid phase epitaxy on a garnet (GGG = Gd3Ga5O12) substrate oriented in the {xc111} dire...

    C. Jelen, S. Charrière, M. Razeghi, V. J. Leppert in MRS Online Proceedings Library (1992)

  18. No Access

    Article

    Optical, Electrical, and Structural Characterization of GaInAsP/InP Layers Grown on Silicon Substrate for 1.35 μm Laser Applications

    A 1.35 μ wavelength GaInAsP / InP double heterostructure laser has been grown on Si substrate by low-pressure metalorganic chemical vapor deposition. The layers are grown directly on Si substrate coated with G...

    K. Mobarhan, C. Jelen, E. Kolev, M. Razeghi in MRS Online Proceedings Library (1992)

  19. No Access

    Article

    Low Pressure Mocvd Growth and Characterization of GaAs and InP on Silicon Substrates

    High quality GaAs and InP have been grown on silicon substrates, using low pressure metalorganic chemical vapor deposition technique. The growth temperature is 550ºC andthe growth rate 100 A/min.

    M. Razeghi, M. Defour, F. Omnes, J. Nagle, P. Maurel… in MRS Online Proceedings Library (1988)

  20. No Access

    Article

    Low Pressure MOCVD Growth and Characterization of GaAs and InP on Silicon Substrates

    High quality GaAs and InP have been grown on silicon substrates, using low pressure metalorganic chemical vapor deposition technique. The growth temperature is 550°C and the growth rate 100 A/min.

    M. Razeghi, M. Defour, F. Omnes, J. Nagle, P. Maurel… in MRS Online Proceedings Library (1988)

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