-
Article
Generating the Activation Patterns of the Leg Muscles During Human Locomotion Using the Central Pattern Generators as a Control Structure
The central pattern generators have been considered as a method to simplify the control of the complex rhythmic motions, e.g., walking, by the central nervous system. In this study, a control structure was des...
-
Article
Antimonide-Based Type II Superlattices: A Superior Candidate for the Third Generation of Infrared Imaging Systems
Type II superlattices (T2SLs), a system of interacting multiquantum wells, were introduced by Nobel Laureate L. Esaki in the 1970s. Since then, this material system has drawn a lot of attention, especially for...
-
Article
Thermal Conductivity of InAs/GaSb Type II Superlattice
The cross-plane thermal conductivity of a type II InAs/GaSb superlattice (T2SL) is measured from 13 K to 300 K using the 3ω method. Thermal conductivity is reduced by up to two orders of magnitude relative to the...
-
Article
Type-II InAs/GaSb photodiodes and focal plane arrays aimed at high operating temperatures
Recent efforts to improve the performance of type II InAs/GaSb superlattice photodiodes and focal plane arrays (FPA) have been reviewed. The theoretical bandstructure models have been discussed first. A review...
-
Article
Quantum dots of InAs/GaSb type II superlattice for infrared sensing
Throughout the past years, significant progress has been made in Type II (InAs/GaSb) photovoltaic detectors in both LWIR and VLWIR ranges. BLIP performance at 60K for 16μm photovoltaic type II detectors has be...
-
Article
Epitaxial Growth of Aluminum Nitride on Sapphire and Silicon
The microstructural characteristics of wide band gap semiconductor, hexagonal A1N thin films on Si(100), (111), and sapphire (0001) and (10ī2) were studied by transmission electron microscopy (TEM) and x-ray d...
-
Article
Study of Thin Films Polarity of Group III Nitrides
Thin films of GaN grown by MOCVD on (0001) sapphire were studied by transmission electron microscopy in order to correlate the observed extended defects with crystal polarity of the films. We propose relativel...
-
Article
Erratum to: High-performance, continuous-wave quantum-cascade lasers operating up to 85°C at λ∼8.8 μm
-
Article
Stranski–Krastanov growth of InGaN quantum dots emitting in green spectra
Self-assembled InGaN quantum dots (QDs) were grown on GaN templates by metalorganic chemical vapor deposition. 2D–3D growth mode transition through Stranski–Krastanov mode was observed via atomic force microsc...
-
Article
Comprehensive study of blue and green multi-quantum-well light-emitting diodes grown on conventional and lateral epitaxial overgrowth GaN
Growths of blue and green multi-quantum wells (MQWs) and light-emitting diodes (LEDs) are realized on lateral epitaxial overgrowth (LEO) GaN, and compared with identical structures grown on conventional GaN. A...
-
Article
High-performance, continuous-wave quantum-cascade lasers operating up to 85°C at λ∼8.8 μm
High-temperature, high-power, and continuous-wave (CW) operation of quantum-cascade lasers with 35 active/injector stages at λ∼8.85 μm above room temperature is achieved without using a buried heterostructure. At...
-
Chapter
Quantum Photovoltaic Devices Based on Antimony Compound Semiconductors
In summary, we have successfully developed the empirical tight-binding modeling for the design of Type II InAs/GaSb superlattices. We have demonstrated very high quality superlattice material growths using sta...
-
Article
Morphological characterization of selectively overgrown GaN via lateral epitaxy
Morphology as well as the dislocation networks in epitaxial GaN thin film, prepared via selectively lateral overgrowth has been characterized using TEM combined with focused ion beam (FIB) tool. The results sh...
-
Article
Study of Thin films Polarity of Group III Nitrides
Thin films of GaN grown by MOCVD on (0001) sapphire were studied by transmission electron microscopy in order to correlate the observed extended defects with crystal polarity of the films. We propose relativel...
-
Article
GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
We report the growth, fabrication and characterization of GaInN/GaN multi-quantum well lasers grown on (00.1) sapphire substrates by low pressure metalorganic chemical vapor deposition. The threshold current d...
-
Article
Comparative Study of Typical Defects in III-Nitride Thin Films and Their Alloys
The microstructure and typical defects in GaN and GaN/GaAlN thin film heterostructures grown on (0001)α-A12O3 were investigated using different transmission electron microscopy (TEM) techniques including diffract...
-
Article
AlxGa1−xN-Based Materials and Heterostructures
We present the metalorganic chemical vapor deposition growth, n-type and p-type do** and characterization of AlxGa1−xN alloys on sapphire substrates. We report the fabrication of Bragg reflectors and the demons...
-
Article
High Resolution X-ray Diffraction of GaN Grown on Sapphire Substrates
X-ray rocking curves are frequently used to assess the structural quality of GaN thin films. In order to understand the information given by the line shape, we need to know the primary mechanism by which the c...
-
Article
InSb Detectors and Focal Plane Arrays on GaAs, Si, and Al203 Substrates
In this paper, we report on the growth and fabrication of InSb detectors and Focal Plane Arrays (FPA’s) on (100) Si, Al203, and (100) and (111) GaAs substrates for infrared (IR) imaging. Several advantages result...
-
Article
High Power InAsSb/InAsSbP Laser Diodes Emitting at 3 ∼ 5 μm Range
We report metalorganic chemical vapor deposition-grown double heterostructure and multiple quantum well InAsSb/InAsSbP laser diodes emitting at 3 to 4 μm and light emitting diodes up to 5 μm. Maximum output po...
