34 Result(s)

Article

Electrogene therapy using endostatin, with or without suicide gene therapy, suppresses murine mammary tumor growth and metastasis

Syngeneic inoculated metastatic mammary cancers received direct intratumoral injection of a plasmid vector containing either endostatin (pEndo) with or without a suicide gene (pHSVtk), pHSVtk alone or control vec...

M-A Shibata, J Morimoto, H Doi, S Morishima, M Naka, Y Otsuki in Cancer Gene Therapy (2007)

Article

A TEM analysis of the Si₃N₄/Si₃N₄ joint brazed with a Cu-Zn-Ti filler metal

Si₃N₄ ceramic was joined to itself using a filler alloy of (CuZn)85Ti15 at 1123–1323 K for 15 min. TEM observation showed that a reaction zone of TiN and/or Ti₂N exists at the interface between the ceramic and fi...

J. Zhang, C. F. Liu, M. Naka, Q.C. Meng, Y. Zhou in Journal of Materials Science (2004)

Article

Brazing Si₃N₄ ceramic using a Cu–Pd–Ti filler alloy for high-temperature applications

J. Zhang, M. Naka, Y. Zhou in Journal of Materials Science (2004)

Article

Applying of ultrasonic waves on brazing of alumina to copper using Zn-Al filler alloy

Ultrasonic waves were applied during brazing of alumina to copper, The intensity of ultrasonic wave was 1 kW and 18 kHz and the aim of this work was to study the effect of the ultrasonic wave and brazing tempe...

M. Naka, K. M. Hafez in Journal of Materials Science (2003)

Article

Target validation in hypoxia-induced vascular remodeling using transcriptome/metabolome analysis

The present study describes combined transcriptome and metabolome analysis for therapeutic target validation in hypoxia-induced vascular remodeling. Exposure to hypoxic conditions resulted in the upregulation ...

H Amano, K Maruyama, M Naka, T Tanaka in The Pharmacogenomics Journal (2003)

Article

Polytypism of SiC and interfacial structure in SiCp/Al composites

In the present work, the polytypism of SiC and the interfacial structure between SiC and Al were investigated using X-ray diffraction (XRD) and high resolution transmission electron microscopy (HREM). It was a...

Tongxiang Fan, Di Zhang, Renjie Wu, T. Shibayanagi, M. Naka in Journal of Materials Science (2002)

Article

The microstructure of ZrO₂-Ni-Si₃N₄ diffusion bonds

In this paper the results are presented of work dealing with the microstructure of ZrO₂-Ni-Si₃N₄ diffusion bonds. Joints were made at 1050°C with bonding times between 22.5 and 360 minutes. The interfacial struct...

R. H. Vegter, M. Maeda, M. Naka, G. Den Ouden in Journal of Materials Science (2002)

Article

Interface structure and formation mechanism of diffusion-bonded SiC/Ni-Cr joint

Feng Jicai, Liu Huijie, M. Naka, J. C. Schuster in Journal of Materials Science Letters (2001)

Chapter

Methods for Production of Amorphous and Nanocrystalline Materials and Their Unique Properties

There are a lot of possible techniques that can be used to prepare amorphous materials. This Chapter is denoted to the three widely used methods of preparation of amorphous and metastable materials namely: bal...

T. Aihara, E. Akiyama, K. Aoki… in Amorphous and Nanocrystalline Materials (2001)

Article

The effect of Si upon the interfacial reaction characteristics in SiCp/Al-Si system composites during multiple-remelting

The composite interfaces play an important role in determining the resultant composite properties, especially the development of interfacial reaction during remelting is critical to the commercialization and s...

Tongxiang Fan, Di Zhang, Zhongliang Shi, Renjie Wu… in Journal of Materials Science (1999)

Article

Interfacial Microstructure and Reaction Phases of Solid State Bonded at SiC/V Joints

SiC was bonded to SiC using V foil at temperatures ranging from 1473 K to 1673 K for 1.8 to 64.8 × 10³ s and 30 MPa in vacuum. Interfacial reactions and microstructures were investigated using electron probe micr...

T. Fukai, M. Naka, J. C. Schuster in Journal of Materials Synthesis and Processing (1998)

Article

Structure and strength of AlN/V bonding interfaces

AlN ceramics are bonded using vanadium metal foils at high temperatures in vacuum. Different bonding temperatures were used in the range 1373–1773 K with bonding times of 0.3–21.6 ks. The AlN/V interfaces of t...

M. H. Ei-Sayed, M. Naka in Journal of Materials Science (1998)

Article

Phase Reactions and Diffusion Path of the SiC/Cr System

Solid-state bonding at pressureless-sintered SiC has been carried out using 25-μm Cr foil at temperatures from 1373 to 1773 K for 1.8 ks in vacuum. The formation of reaction phases and microstructures at the i...

M. Naka, J. C. Feng, J. C. Schuster in Journal of Materials Synthesis and Processing (1998)

Article

Phase formation and diffusion path of SiC/Ta/SiC joint

Abstracts are not published in this journal

J. C. Feng, M. Naka, J. C. Schuster in Journal of Materials Science Letters (1997)

Article

Phase reaction and diffusion path of the SiC/Ti system

Bonding of SiC to SiC was conducted using Ti foil at bonding temperatures from 1373 to 1773 K in vacuum. The total diffusion path between SiC and Ti was investigated in detail at 1673 K using Ti foil with a th...

M. Naka, J. C. Feng, J. C. Schuster in Metallurgical and Materials Transactions A (1997)

Article

Ag effect on microstructures and strength Of Si3N4/Si3N4 joint brazed with Cu-Ag-Ti filler metals

F. Tamai, M. Naka in Journal of Materials Science Letters (1996)

Article

Ti effect on microstructure and strength Of Si₃N₄/Si₃N₄ and SiC/SiC joints brazed with Cu-Ag-Ti filler metals

T. Tamai, M. Naka in Journal of Materials Science Letters (1996)

Article

Ag effect on microstructures and strength of SiC/SiC joint brazed with Cu-Ag-Ti filler metals

T. Tamai, M. Naka in Journal of Materials Science Letters (1996)