10 Result(s)
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M. Karthigai Pandian
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Article
Influence of Barrier with Gate Sinking on the Performance of InAs Composite Channel DMDG-HEMT Devices for High-Frequency Applications
In this work, the impact of barrier thickness (Tb) on the behavior of InGaAs/InAs/InGaAs composite channel Dual material Double gate (DMDG) high electron mobility transistor (HEMT) devices for high-Frequency appl...
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Article
A 2D Unified Subthreshold Drain Current Investigation for Junctionless Cylindrical Surrounding Gate(JCSG) Silicon Nanowire Transistor
In this paper, an analytical model of transconductance, subthreshold current and transcapacitance for short-channel Junction Less Cylindrical Surrounding Gate Nanowire Transistor (JLCSGNWT) is derived. The 2D ...
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Chapter and Conference Paper
Investigating the Ambient Thermal Loading Failure of Lead–Acid Battery Based on Thermal Analysis
The external (surrounding) temperature variation majorly influences the battery lifetime and performance. The temperature variations lead to failure of individual cells as well as performance of the battery. L...
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Chapter and Conference Paper
Automatic Drip Irrigation Control System for Paddy Fields in Depleting Water Resource Areas
Agriculture needs major portion of freshwater available in the world to produce food for increasing population. In this proposed method, soil moisture sensor is placed in constant distances in the whole paddy ...
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Article
Investigation of ON Current and Subthreshold Swing of an InSb/Si Heterojunction Stacked Oxide Double-Gate TFET with Graphene Nanoribbon
This research intends to develop an analytical model for a heterojunction graphene nanoribbon double-gate tunnel field-effect transistor with a stacked SiO2/HfO2 layer. Embodying indium antimony as the source ma...
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Article
Analytical Modeling and Simulation of Gate-All-Around Junctionless Mosfet for Biosensing Applications
A new analytical model for a Junctionless Field Effect Transistor that can be used in biosensor applications is proposed in this research work. The Semiconductor device analyzed here employs a Gate-All-Around ...
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Article
A novel 2-D analytical model for the electrical characteristics of a gate-all-around heterojunction tunnel field-effect transistor including depletion regions
A new two-dimensional analytical model is proposed for the electrical attributes of a gate-all-around heterojunction tunnel field-effect transistor, including the potential distribution, lateral and vertical e...
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Article
Performance Investigation of Gate Engineered tri-Gate SOI TFETs with Different High-K Dielectric Materials for Low Power Applications
In this article, a three-dimensional model of Tri-gate Tunnel Filed effect transistors (TFET) with different gate materials is proposed. Analysis and comparison of various structures such as single material ga...
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Chapter and Conference Paper
Weld Strength Analysis of Ultrasonic Polymer Welding Using Adaptive Neuro-Fuzzy Inference System
Polymers are widely used in automotive and aerospace industries for its better strength and easy to design the expected shape and size of parts. To join the two plastic parts, ultrasonic welding is an effectiv...
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Article
Ultrasonically welded and non-welded polypropylene and PC-ABS blend thermal analysis
Automobile industries are focusing toward the reduction in the weight of vehicle that leading to cost reduction and improving the fuel efficiency. Polymers are the main alternatives in conventional engineering...
