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  1. No Access

    Article

    Properties of InGaN/GaN Quantum Wells Grown by Metalorganic Chemical Vapor Deposition

    Optical and structural properties of InGaN/GaN quantum wells having growth interruption were investigated using high-resolution x-ray diffraction, photoluminescence and transmission microscopy. InxGa1−xN/GaN (x>0...

    M. G. Cheong, K. S. Kim, C. S. Kim, R. J. Choi… in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    Exposure of defects in GaN by plasma etching

    The effect of plasma exposure to n-type GaN surfaces has been examined. Etch pits are formed as a result of preferential sputtering at the sites of threading dislocations. Dark spots which are visible before p...

    H.W. Choi, C. Liu, M.G. Cheong, J. Zhang, S.J. Chua in Applied Physics A (2005)