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Article
The microstructure of Sn in near-eutectic Sn–Ag–Cu alloy solder joints and its role in thermomechanical fatigue
During the solidification of solder joints composed of near-eutectic Sn–Ag–Cu alloys, the Sn phase grows rapidly with a dendritic growth morphology, characterized by copious branching. Notwithstanding the comp...
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Article
Reactions of lead-free solders with CuNi metallizations
We have done experimental research on the dissolution rate and intermetallic growth on Cu, Ni, and CuNi-alloy substrates as a function of time and Cu/Ni ratio of the substrate. Reactions that occur when CuNi m...
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Article
Electromigration Modeling of Blech Experiment with Comparison to Recent Experimental Data
Finite element analysis is applied to simulate electromigration in a copper line/tungsten junction, which is a typical structure in Blech experiments adopted to measure the electromigration drift velocity by e...
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Article
Development of under bump metallizations for flip chip bonding to organic substrates
Several under bump metallization (UBM) schemes using CuNi alloys as the solderable layer were investigated. Nickel slows down dissolution of the UBM into the solder and formation of intermetallics during reflo...
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Article
Under Bump Metallization Development for Eutectic Pb-Sn Solders
Due to its advantage in number of I/Os over other interconnection method, flip chip interconnection technology plays a key role in today’s electronics packaging. Good understanding of interfacial reactions bet...
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Article
Flip Chip Metallurgies for Lead-Free Solders
The most commonly used lead-free solders contain large amounts of tin, which makes them incompatible with the conventional Cu-based underbump metallization (UBM) schemes. The tin in the solder reacts with the ...
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Article
Low Stress under Bump Metallizations for Direct Chip Attach
In order to use a flip chip method for bonding the Si chip directly to an organic substrate, compatible under bump metallization (UBM) must be available. Conventional schemes with a copper-based solderable lay...
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Article
Study of Practical Adhesion of Metals to Glass Substrates
Metallic coatings on glass substrates are widely used in various microelectronic components. However, sometimes high residual stress generated in the deposition process or after leads to the loss of adhesion b...
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Article
Under Bump Metallization Development for High Sn Solders
Several under bump metallisation (UBM) schemes using Ni or CuNi alloys as the solderable layer were investigated. Cr or Ti was used as the adhesion layer. The UBM pads of different compositions were sputter de...
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Article
Electromigration Failure Distributions for Multi-Layer Interconnects as a Function of Line Width: Experiments and Simulation
In narrow metal lines used for chip level interconnects, the line width can strongly affect the electromigration reliability, typically due to variations in the microstructure and in the mechanical stress stat...
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Article
Fatigue Crack Growth Behavior of Small Sn-Bi-Ag Solder Joints
Reliability of solder interconnects is normally characterized by extrapolation of bulk solder reliability data, such as crack growth measurements of solder materials in the bulk form. In the present study, exp...
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Article
Stress-Voiding and Electromigration in Multilevel Interconnects
Stress-voiding and electromigration have become urgent reliability concerns at the decrease of interconnect dimensions to submicron size. Severe stress voiding may arise in multilevel metallizations, particula...
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Article
The Effect of Cluster Interactions on Electromigration Induced Stress Evolution in Confined Metal Lines
In near-bamboo interconnect lines used in advanced integrated circuits, electromigration flux divergences occur at the intersection between polycrystalline cluster segments (where grain boundaries offer a fast...
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Article
Stress-Voiding and Electromigration in Multilevel Interconnect Metallizations
Stress-voiding or stress migration (SM), and electromigration (EM) are urgent problems in ULSI microcircuits with features in the submicron range. Severe stress-voiding arises in multilevel metallizations beca...
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Article
Micromechanical Testing of Electronic Packaging Components and Materials
Mechanical modelling of microelectronic packages for design optimization requires the quantitative knowledge of a large number of physical parameters. Because of the composite nature of many components, and be...
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Article
Mechanical Properties of Plated Copper
Both electrodeposited and electroless copper are widely used in the electronics industry to form signal lines and plated-through holes in printed circuit cards and boards. Because of widely differing thermal e...
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Article
Microstructure Based Modelling of Stress Migration and Electromigration Induced Failure Distributions
Stress and current induced degradation of the interconnects may well define the ultimate limits on device density and total on-chip power in microelectronic circuits. The two damage mechanisms are found to be ...
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Article
Analysis of Thermal Stress Induced Void Growth During Thermal Cycling
Recent work in thermal stress induced voiding in passivated lines has focussed on the isothermal, quasi–steady state growth of existing voids. In this work, the transient growth and shrinkage of voids during t...
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Article
Analysis of thermal stress induced void growth during thermal cycling
Recent work in thermal stress induced voiding in passivated lines has focussed on the isothermal, quasi-steady state growth of existing voids. In this work, the transient growth and shrinkage of voids during t...
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Article
Microstructure based modelling of stress migration and electromigration induced failure distributions
Stress and current induced degradation of the interconnects may well define the ultimate limits on device density and total on-chip power in microelectronic circuits. The two damage mechanisms are found to be ...
