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  1. No Access

    Article

    Band Alignment in Black Phosphorus/Transition Metal Dichalcogenide Heterolayers: Impact of Charge Redistribution, Electric Field, Strain, and Layer Engineering

    In this work, the energy band alignments of heterostructures of 2D materials are studied, where these are crucial for various device applications. Using density functional theory (DFT), we consider heterostruc...

    Nupur Navlakha, Priyamvada Jadaun, Leonard F. Register… in Journal of Electronic Materials (2023)

  2. No Access

    Article

    Method to enhance resonant interlayer tunneling in bilayer-graphene systems

    Energy- and momentum-conserving resonant tunneling observed between two layers of two-dimensional semiconductors could be used to create interlayer tunnel field-effect transistors (ITFETs), which could have di...

    Nitin Prasad, **an Wu, Sanjay K. Banerjee… in Journal of Computational Electronics (2021)

  3. Article

    Open Access

    The microscopic origin of DMI in magnetic bilayers and prediction of giant DMI in new bilayers

    Skyrmions are widely regarded as promising candidates for emergent spintronic devices. Dzyaloshinskii–Moriya interaction (DMI) is often critical to the generation and manipulation of skyrmions. However, there ...

    Priyamvada Jadaun, Leonard F. Register, Sanjay K. Banerjee in npj Computational Materials (2020)

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  4. No Access

    Article

    A simulation study of voltage-assisted low-energy switching of a perpendicular anisotropy ferromagnet on a topological insulator

    We present a novel memory device that consists of a thin ferromagnetic layer of Fe deposited on topological insulator thin film, $$\hb...

    Bahniman Ghosh, Rik Dey, Leonard F. Register… in Journal of Computational Electronics (2017)

  5. No Access

    Article

    First-principles simulation of oxygen vacancy migration in \(\hbox {HfO}_{ x}\) , \(\hbox {CeO}_{ x}\) , and at their interfaces for applications in resistive random-access memories

    Transition metal-oxide resistive random-access memories seem to be a viable candidate as the next-generation storage technology because transition metals have multiple oxidation states and are good ionic condu...

    Aqyan A. Bhatti, Cheng-Chih Hsieh, Anupam Roy… in Journal of Computational Electronics (2016)

  6. No Access

    Article

    Thin Film Electronic Properties of Ternary Topological Insulator

    Using an ab initio density functional theory (DFT), we study thin film electronic properties of topological insulators (TIs) based on ternary compounds of Tl (thallium) and Bi (bismuth). We consider TlBiX2 (X=Se,...

    Jiwon Chang, Leonard F. Register, Sanjay K. Banerjee… in MRS Online Proceedings Library (2012)

  7. No Access

    Article

    Schrödinger-equation-based quantum corrections addressing degeneracy-breaking and confinement-enhanced scattering

    We review extensions of Schrödinger-equation-based quantum corrections that have been implemented within the semiclassical Monte Carlo simulator Monte Carlo of The University of Texas (MCUT) to address quantum-co...

    Leonard F. Register, Ningyu Shi in Journal of Computational Electronics (2010)

  8. No Access

    Article

    Quantum Transport Simulation of Carrier Capture and Transport within Tunnel Injection Lasers

    Hot electron distributions within the active region of quantum well lasers lead to gain suppression, reduced quantum efficiency, and increased diffusion capacitance, greater low-frequency roll-off and high-fre...

    Wanqiang Chen, **n Zheng, Leonard F. Register… in Journal of Computational Electronics (2002)

  9. No Access

    Chapter

    A Numerical Method for the Calculation of Transient Response in Mesoscopic Devices

    The transient behavior in 1-D quantum devices such as the resonant tunneling diode are commonly modeled using numerical Wigner Function methods (Ravaioli et al, 1985; Frensley, 1987). However, modeling 2-D and 3-...

    Leonard F. Register, Umberto Ravaioli, Karl Hess in Granular Nanoelectronics (1991)

  10. No Access

    Chapter

    Transient Response in Mesoscopic Devices

    Preliminary results of a numerical method for modeling translent through steady-state conditions in mesoscopic devices are presented. Here, the time-evolution of n-dimensional carrier wave functions are simula...

    Leonard F. Register, Umberto Ravaioli, Karl Hess in Computational Electronics (1991)