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  1. No Access

    Article

    Modeling of defects, dopant diffusion and clustering in silicon

    Ion implantation is a very well established technique to introduce dopants in semiconductors. This technique has been traditionally used for junction formation in integrated circuit processing, and recently al...

    Maria Aboy, I. Santos, L. Pelaz, L. A. Marqués… in Journal of Computational Electronics (2014)

  2. No Access

    Article

    Front-end process modeling in silicon

    Front-end processing mostly deals with technologies associated to junction formation in semiconductor devices. Ion implantation and thermal anneal models are key to predict active dopant placement and activati...

    L. Pelaz, L. A. Marqués, M. Aboy, P. López, I. Santos in The European Physical Journal B (2009)

  3. No Access

    Chapter and Conference Paper

    Molecular Dynamics Modeling of Octadecaborane Implantation into Si

    We have carried out molecular dynamics simulations of monatomic B and octadecaborane cluster implantations into Si in order to make a comparative study and determine the advantages and drawbacks of each approa...

    Luis A. Marqués, L. Pelaz, I. Santos… in Simulation of Semiconductor Processes and … (2007)

  4. No Access

    Chapter and Conference Paper

    Multiscale Modeling of the Implantation and Annealing of Silicon Devices

    Process simulators for silicon devices are benefiting from recent work on several models that cover vastly different length and time scales. In this talk we will focus on molecular dynamics (MD) and Monte Carl...

    G. H. Gilmer, L. Pelaz, C. Rafferty… in Simulation of Semiconductor Processes and … (1998)

  5. No Access

    Article

    Atomistic Model of Transient Enhanced Diffusion and Clustering of Boron In Silicon

    An atomistic model for B implantation, diffusion and clustering is presented. The model embodies the usual mechanism of Si self-interstitial diffusion and B kick-out and also includes the formation of immobile...

    L. Pelaz, G. H. Gilmer, M. Jaraiz, H.-J. Gossmann… in MRS Online Proceedings Library (1997)