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    A 600 V high voltage gate driver IC with excellent allowable negative VS bias capability for E-mode GaN power devices

    In this paper, a 600 V high voltage gate driver IC with excellent allowable negative VS bias capability is proposed. In order to prevent the bootstrap capacitor from overcharging, a voltage signal from negative v...

    Yangyang Lu, **g Zhu, Kongsheng Hu… in Analog Integrated Circuits and Signal Proc… (2020)