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Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries. Part I: GaAs, GaSb, and AlGaAs
High-density plasma etching of GaAs, GaSb, and AlGaAs was performed inICl/Ar and IBr/Ar chemistries using an Inductively Coupled Plasma (ICP)source. GaSb and AlGaAs showed maxima in their etch rates for both p...
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Article
Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries. Part II: InP, InSb, InGaP, and InGaAs
A parametric study of Inductively Coupled Plasma (ICP) etching of InP, InSb, InGaP, and InGaAs has been carried out in ICl/Ar and IBr/Ar chemistries. Etch rates in excess of 3.1 for InP, 3.6 for InSb, 2.3 for ...