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    Selective area growth of GaN using gas source molecular beam epitaxy

    Ammonia cracking efficiencies on various surfaces were examined. The following is an ordering of surfaces according to their ammonia cracking efficiencies: GaN (highest), Si3N4, SiO2 (lowest). Selective area grow...

    V. K. Gupta, K. L. Averett, M. W. Koch, B. L. McIntyre… in Journal of Electronic Materials (2000)