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Article
Dielectric Functions and Critical Points of GaAsSb Alloys
We report the pseudodielectric functions and the critical points of GaAsxSb1−x ternary alloy films. Data were obtained by performing spectroscopic ellipsometry on 1-μm-thick films grown on (001) GaAs by using mol...
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Article
Open AccessDirect electron injection into an oxide insulator using a cathode buffer layer
Injecting charge carriers into the mobile bands of an inorganic oxide insulator (for example, SiO2, HfO2) is a highly complicated task, or even impossible without external energy sources such as photons. This is ...
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Article
Analytic representation of the dielectric function of GaN for temperatures from 26 to 690 K
We report an analytic expression for the dielectric function ε of GaN as a continuous function of energy from 0.74 to 6.42 eV and of temperature from 26 to 690 K. The ε spectra on which the analysis is based were...
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Article
Analytic determination of the dielectric function of InSb at energies from 0.74 to 6.42 eV at temperatures from 31 to 675 K
Dielectric functions as analytic functions of temperature are useful for nondestructive in-situ monitoring of material deposition and for device design. We present an analytic expression that accurately represent...
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Article
Effect of post-annealing temperature on the dielectric function of solution-processed LaAlO x /Si Films
We report the optical properties of amorphous LaAlOx (LAO) films grown by using the sol-gel process. The dielectric functions ε of the LAO films are obtained from 0.7 to 8.6 eV as a function of post-annealing tem...
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Article
Parametric model dielectric functions of InAs for temperatures from 22 to 675 K
Dielectric functions as continuous functions of temperature are useful for nondestructive in-situ monitoring of deposition and device design. Here, we present an analytic expression that accurately represents ...
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Article
Pressure-induced resonance Raman effect of InAs x P1−x alloy films on InP
We have studied the effect of hydrostatic pressure on the Raman spectra of InAs x P1−x alloy films grown on InP substrates. High-pressure Raman scattering provid...
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Article
Dielectric function and energy of the E 0 critical point of hexagonal GaN at 26 K studied by using spectroscopic ellipsometry
We report the dielectric function from 0.74 to 6.42 eV of hexagonal GaN at 26 K, along with the energies of its E 0 exciton and critical point. The GaN sample is a 1.9 µm thick film deposited on a...
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Article
Investigation of InSb critical-point energies at 25 K by using spectroscopic ellipsometry
We report dielectric function data from 0.74 to 6.6 eV for InSb at 25 K obtained using spectroscopic ellipsometry. The values of the critical-point (CP) energies were determined from numerically calculated sec...
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Article
Temperature dependence of the dielectric function and critical-point energies of InAs
We report the complex dielectric function of InAs for energies from 0.74 to 6.54 eV and temperatures from 22 to 675 K. The complex dielectric function was determined by using spectroscopic ellipsometry. The cr...
