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Open AccessCorrection to: Low-threshold topological nanolasers based on the second-order corner state
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Open AccessLow-threshold topological nanolasers based on the second-order corner state
Topological lasers are immune to imperfections and disorder. They have been recently demonstrated based on many kinds of robust edge states, which are mostly at the microscale. The realization of 2D on-chip to...
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Open AccessIdentifying defect-related quantum emitters in monolayer WSe2
Monolayer transition metal dichalcogenides have recently attracted great interests because the quantum dots embedded in monolayer can serve as optically active single-photon emitters. Here, we provide an inter...
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Open AccessDiabolical points in coupled active cavities with quantum emitters
In single microdisks, embedded active emitters intrinsically affect the cavity modes of the microdisks, resulting in trivial symmetric backscattering and low controllability. Here we demonstrate macroscopic co...
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Anisotropies of the g-factor tensor and diamagnetic coefficient in crystal-phase quantum dots in InP nanowires
Crystal-phase low-dimensional structures offer great potential for the implementation of photonic devices of interest for quantum information processing. In this context, unveiling the fundamental parameters o...
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Ion-bombardment-induced reduction in vacancies and its enhanced effect on conductivity and reflectivity in hafnium nitride films
Although the role of ion bombardment on electrical conductivity and optical reflectivity of transition metal nitrides films was reported previously, the results were controversial and the mechanism was not yet...