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    Article

    Hydrophilic patterning of octadecyltrichlorosilane (OTS)-coated paper via atmospheric-pressure dielectric-barrier-discharge jet (DBDjet)

    This study demonstrates a method for patterning paper-based microfluidic devices. An octadecyltrichlorosilane (OTS) solution is used to coat a chromatography paper to make it hydrophobic. A low-temperature (~ ...

    Pei-Yu Cheng, Jui-Hsuan Tsai, Jian-Zhang Chen in Cellulose (2020)

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    Article

    Ar dielectric barrier discharge jet (DBDjet) plasma treatment of reduced graphene oxide (rGO)–polyaniline (PANI)–chitosan (CS) nanocomposite on carbon cloth for supercapacitor application

    A low-temperature (< 42 °C) Ar dielectric barrier discharge jet (DBDjet) is used to treat screen-printed reduced graphene oxide (rGO)–polyaniline (PANI)–chitosan (CS) nanocomposites used as the electrodes of g...

    Jui-Chen Hsin, Yi-Chen Cheng, Meng-Jiy Wang in Energy, Ecology and Environment (2020)

  3. Article

    Investigation of ultrashort (< 1 min) calcination processes for conversion of Pt–SnOx from mixture of chloroplatinic acid and tin(II) chloride

    We investigate the ultrashort (< 1 min) calcination process for Pt–SnOx catalysts converted from a mixture solution of chloroplatinic acid and tin(II) chloride in air. An electric furnace is used to test the ultr...

    Chia-Chun Lee, Tzu-Ming Huang, I-Chun Cheng, Jian-Zhang Chen in SN Applied Sciences (2019)

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    Article

    Low-Temperature-Annealed Reduced Graphene Oxide–Polyaniline Nanocomposites for Supercapacitor Applications

    Screen-printed reduced graphene oxide (rGO)–polyaniline (PANI) nanocomposites with/without post-annealing were used as the electrode of a supercapacitor with a polyvinyl alcohol/H2SO4 quasi-solid-state gel electr...

    Chen-Yu Liao, Hung-Hua Chien, Yu-Chuan Hao in Journal of Electronic Materials (2018)

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    Article

    Nitrogen Atmospheric-Pressure-Plasma-Jet Induced Oxidation of SnOx Thin Films

    SnOx thin films that were rf-sputter-deposited under various gas flow ratios ([O2]/([O2] + [Ar]) OFR = 3.0, 3.6, 4.2 and 4.8 %) were rapidly annealed using atmospheric pressure plasma jets (APPJs) in temperature ...

    Guan-Wei Lin, Yu-Hao Jiang, Peng-Kai Kao in Plasma Chemistry and Plasma Processing (2015)

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    Article

    HfZnO/ZnO Heterostructures Fabricated Using Low-Cost Large-Area Compatible Sputtering Processes

    We investigated the electrical properties of the rf-sputtered HfxZn1-xO/ZnO heterostructures. The thermal annealing on ZnO prior to the HfxZn1-xO deposition greatly influences the properties of the heterostructur...

    Chih-Hung Li, Jian-Zhang Chen, I.-Chun Cheng in MRS Online Proceedings Library (2014)

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    Article

    New Optimal Asymmetric Quantum Codes Derived from Negacyclic Codes

    The construction of quantum maximum-distance-separable (MDS) codes have been studied by many researchers for many years. Here, by using negacyclic codes, we construct two families of asymmetric quantum codes. ...

    Jian-Zhang Chen, Jian-** Li, Jie Lin in International Journal of Theoretical Physics (2014)

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    Article

    Flexible Transparent ZnO:Al/ZnO/CuAlO x :Ca Heterojunction Diodes on Polyethylene Terephthalate Substrates

    Transparent flexible n +-ZnO:Al (100 nm)/n-ZnO (40 nm)/p-CuAlO x :Ca (100 nm, 200 nm, 300 nm) diodes were fabricated on polyethylene terephthalate substrates at r...

    Chu-Te Chi, I-Feng Lu, I-Chung Chiu, Po-Yuan Chen in Journal of Electronic Materials (2013)

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    Article

    Characterization of rf-sputtered HfMgZnO thin films

    MgZnO becomes amorphous or short-range-ordered with the addition of hafnium oxide. The films are rf-sputter deposited onto glass substrates (Eagle 2000, Corning Inc.) from Mg0.05HfxZn0.95-xO targets (x=0, 0.025, ...

    Hantsun Chung, Jian-Zhang Chen, I-Chun Cheng in MRS Online Proceedings Library (2012)

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    Article

    Stability of Amorphous Silicon Thin Film Transistors under Prolonged High Compressive Strain

    We studied the effect of prolonged mechanical strain on the electrical characteristics of thin-film transistors of hydrogenated amorphous silicon made at a process temperature of 150ºC on 51-µm thick Kapton po...

    Jian-Zhang Chen, I-Chun Cheng, Sigurd Wagner in MRS Online Proceedings Library (2007)