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Article
Tuning electrical parameters of graphene/p-type polycrystalline silicon Schottky diodes by ultraviolet irradiation
The present work reports the fabrication and detailed electrical properties of graphene/p-type polycrystalline silicon (poly-Si) Schottky diodes with and without ultraviolet irradiation. Ultraviolet treatment ...
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Article
Interface characteristics for graphene contact to n-type and p-type GaN observed by X-ray photoelectron spectroscopy
The interface characteristics of graphene/GaN samples using X-ray photoelectron spectroscopy (XPS) measurements are investigated. XPS makes it possible to extract a reliable barrier-height value. For graphene/...
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Article
Cadmium content-dependent photoluminescent properties and band offsets of Zn1−x Cd x O films
In this study, the Zn1− x Cd x O (x = 0, 1.6, 3.3, and 4.7 %) films were deposited on substrates by the sol–gel technique. X-ray diffraction, ph...