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Article
Plasma Mode Trench Etching with Direct Hydrocarbon Injection
Planar plasma etching of silicon for fabrication of deep trenches has been studied using the method of factorial design. A highly anisotropic etching profile with a slight positive slope is obtained using SF6, C2
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Article
Gate Oxide Damage in Dry Photoresist Strip** Environments
The effect of oxygen plasma strip** environments on the electrical properties of thin oxides has been studied. A barrel, parallel plate and downstream stripper are compared. Damage, measured by shifts in fla...
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Article
In-Situ Monitoring of Electrical Parameters for Dry Etching
In this paper, external electrical measurements and a circuit model are used to obtain indirectly the plasma potential, electron density, ion current density, and sheath thickness. In a revised and extended ci...
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Article
Thin Oxide Defects Resulting from Plasma Induced Wafer Charging
EEPROM charge monitors reveal that an O2 plasma induces a negative charge which peaks at the wafer center for the asher used. The charge damage to small gate area MOS capacitors is investigated by using “antenna”...
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Article
The Role of “Antenna” Structure on Thin Oxide Damage from Plasma Induced Wafer Charging
A new, physically-based model has been developed to successfully explain the roles of device structure and plasma nonuniformity on charge damage. The model includes an equivalent circuit for the charging of MO...
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Article
Limitations of Plasma Charging Damage Measurements Using MOS Capacitor Structures
This paper investigates the sensitivity and limitation of capacitor testing for measuring potential charging damage to gate oxides in a given plasma step. While C-V measurements are the most directly related t...