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  1. No Access

    Article

    Limitations of Plasma Charging Damage Measurements Using MOS Capacitor Structures

    This paper investigates the sensitivity and limitation of capacitor testing for measuring potential charging damage to gate oxides in a given plasma step. While C-V measurements are the most directly related t...

    M. A. Shawming, Wael L. N. Abdel-Αti, James P. Mcvittie in MRS Online Proceedings Library (1996)

  2. No Access

    Article

    Thin Oxide Defects Resulting from Plasma Induced Wafer Charging

    EEPROM charge monitors reveal that an O2 plasma induces a negative charge which peaks at the wafer center for the asher used. The charge damage to small gate area MOS capacitors is investigated by using “antenna”...

    Sychyi Fang, James P. McVittie in MRS Online Proceedings Library (1992)

  3. No Access

    Article

    The Role of “Antenna” Structure on Thin Oxide Damage from Plasma Induced Wafer Charging

    A new, physically-based model has been developed to successfully explain the roles of device structure and plasma nonuniformity on charge damage. The model includes an equivalent circuit for the charging of MO...

    Sychyi Fang, James P. McVittie in MRS Online Proceedings Library (1992)

  4. No Access

    Article

    Gate Oxide Damage in Dry Photoresist Strip** Environments

    The effect of oxygen plasma strip** environments on the electrical properties of thin oxides has been studied. A barrel, parallel plate and downstream stripper are compared. Damage, measured by shifts in fla...

    Karen H. Sibbett, J. Ignacio Ulacia, James P. McVittie… in MRS Online Proceedings Library (1987)

  5. No Access

    Article

    In-Situ Monitoring of Electrical Parameters for Dry Etching

    In this paper, external electrical measurements and a circuit model are used to obtain indirectly the plasma potential, electron density, ion current density, and sheath thickness. In a revised and extended ci...

    J. Ignacio, F. Ulacia, James P. McVittie in MRS Online Proceedings Library (1987)

  6. No Access

    Article

    Plasma Mode Trench Etching with Direct Hydrocarbon Injection

    Planar plasma etching of silicon for fabrication of deep trenches has been studied using the method of factorial design. A highly anisotropic etching profile with a slight positive slope is obtained using SF6, C2

    Steven D. Leeke, David Kuan Yu Liu, James P. McVittie in MRS Online Proceedings Library (1986)