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    Preparation of 30×30 mm2 Free-Standing GaN Wafer by Mechanical Liftoff and Optical Properties in The Backside of The Free GaN by Cathodoluminescence

    In this study, free-standing GaN was produced from 350- to 400-μm-thick GaN films grown on sapphire by using hydride vapor phase epitaxy. The thick films were separated from the substrate by using the mechanic...

    Hwa-Mok Kim, Jae-Eung Oh, Tae-Won Kang in MRS Online Proceedings Library (2001)