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Article
Correlation of Surface Morphologies with Mn Compositions of Ga1−xMnxAs Epilayers Grown by Liquid Phase Epitaxy
In this letter, we investigated the correlation between as-grown surface morphologies and Mn compositions of Ga1-xMnxAs epilayers - a III-V diluted magnetic semiconductor - grown by liquid phase epitaxy (LPE). Ga
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Article
Growth of GaN Nanorods on (0001) Sapphire Substrates by Hydride Vapor Phase Epitaxy
GaN nanorods were grown on (0001) sapphire substrates by hydride vapor phase epitaxy HVPE) through a self-assemble process. The nanorods were grown at high growth rate, with the c-axis maintained perpendicular...
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Article
Growth and applications of HVPE-GaN nanorods
We demonstrate the properties of gallium nitride nanorods by hydride vapor phase epitaxy (HVPE). Single crystalline gallium nitride nanorods are formed on a sapphire substrate by HVPE. Single crystalline p-typ...
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Article
Growth of InGaN Nanorods as the Blue Light Source for White Light Emitting Devices
This work demonstrates the properties of InGaN nanorod arrays with various In mole fractions by modified HVPE using In metal at the low growth temperature. The nanorods grown on (0001) sapphire substrates are ...
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Article
Preparation of 30×30 mm2 Free-Standing GaN Wafer by Mechanical Liftoff and Optical Properties in The Backside of The Free GaN by Cathodoluminescence
In this study, free-standing GaN was produced from 350- to 400-μm-thick GaN films grown on sapphire by using hydride vapor phase epitaxy. The thick films were separated from the substrate by using the mechanic...