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Article
Electronic characterization of several 100 μm thick epitaxial GaAs layers
Non intentionally doped thick epitaxial GaAs layers, grown by chemical vapour phase epitaxy using a high growth rate, are characterized by different electrical techniques applied on a junction (forward and rev...
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Article
Mechanism of GaAs transport by water reaction application to the growth of thick epitaxial layers
We study in detail the decomposition of GaAs by water, and show that the growth technique of epitaxial layers based on this reaction can lead to growth rates reaching several μm per minute. This opens an econo...
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Article
Characterization of closed space vapor transport GaP epitaxial layers
The growth of homoepitaxial GaP layers using Te-doped GaP as source material has been obtained by the so-called closed space vapor transport technique. The photoluminescence study shows that these layers, when...
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Article
Defects in pulsed laser and thermal processed ion implanted silicon
The evolution of the nature and concentration of the defects produced by 100 or 300 keV As ions at fluences 1 to 4×10−12 cm−2 inn-type, Fz Silicon doped with 1015 to 1016 cm−3 has been studied as function of ther...
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Article
Defect annealing in phosphorus implanted silicon: A D.L.T.S. study
Deep-level transient spectroscopy (D.L.T.S.) has been applied to the determination of defects in ion implanted silicon. Preliminary results concerning defects introduced by 130 KeV phosphorous ion implantation...