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  1. No Access

    Article

    Optical spectroscopy of a-plane-oriented ZnO epilayers grown by plasma-assisted molecular beam epitaxy

    a-plane ZnO layers were successfully grown, by plasma-assisted molecular beam epitaxy, on r-plane (011–2) sapphire substrates. Several features attributed to the A, B and C free excitonic transit...

    B. Lo, M. B. Gaye, A. Dioum, C. M. Mohrain, M. S. Tall, J. M. Chauveau… in Applied Physics A (2014)

  2. No Access

    Chapter and Conference Paper

    Contribution of low tension ion-milling to heterostructural semiconductors preparation

    Specimens of superior quality are required for quantitative Transmission Electron Microscopy. The classical preparation of heterostructural semiconductors includes stages of mechanical polishing followed by io...

    M. Korytov, O. Tottereau, J. M. Chauveau… in EMC 2008 14th European Microscopy Congress… (2008)

  3. No Access

    Article

    Growth and characterization of A-plane ZnO and ZnCoO based heterostructures

    Non polar ZnO and (Zn, Co)O layers were successfully grown on (11̄02) sapphire (R-plane sapphire). The growth process was shown to directly influence the surface morphology as well as the strain state in (112̄...

    J.-M. Chauveau, C. Morhain, B. Lo, B. Vinter, P. Vennéguès, M. Laügt… in Applied Physics A (2007)