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Article
Remote Imaging by Nanosecond Terahertz Spectrometer with Standoff Detector
Creation and application of the remote imaging spectrometer based on high power nanosecond terahertz source with standoff detector is reported. 2D transmission images of metal objects hided in nonconductive (d...
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Article
Deformation-Induced Transformations of Nanocrystalline Ge-Si Film During Indentation
Thin films of Ge-Si with a duplex nanocrystalline structure were fabricated by magnetron co-sputtering and nanoindentations were made on these films. Transmission electron microscopy and Raman spectroscopy wer...
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Article
Thermal-imaging technologies for detecting damage during high-cycle fatigue
A high-speed and high-sensitivity thermographic-infrared (IR) imaging system has been used for nondestructive evaluation of specimen-temperature evolutions during high-cycle fatigue experiments. The relationsh...
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Article
An HTS 20-Pole Microstrip Filter for GSM-1800 Base Stations
In order to resolve the problems that the Chinese mobile communication was facing (high dropped call rate, not so good voice quality, etc.), we developed a 20-pole high-temperature superconductor thin-film mic...
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Article
Microstructural evaluation of fatigue damage in SA533-B1 and type 316L stainless steels
Transmission electron microscopy (TEM) examinations were made on fatigued SA533-B1 low alloy steel and Type 316L stainless steel specimens with the intention to investigate the mis-orientation changes among di...
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Article
The structure and property characteristics of amorphous/nanocrystalline silicon produced by ball milling
The structural transformation of polycrystalline Si induced by high energy ball milling has been studied. The structure and property characteristics of the milled powder have been investigated by x-ray diffrac...
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Article
Effect of Fluorine on the Dopant Diffusion of Through-Oxide Implanted Boron In Si - A Correlation with Microstructural Defects
In case of boron through-oxide implant, it has been shown that the knocked-in oxygen atoms segregate at initially nucleated dislocation sites during the incubation and no significant junction movement is detec...
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Article
Stress Dependent Electrical Activation of Implanted Si IN GaAs - A Four Point Bending Study
A four point bending experiment was conducted to study the effect of stress on the electrical activation of implanted 29Si in GaAs. The stress distribution in the SiNx-coated GaAs was quantitatively examined. 29S...