Page
%P
![Loading...](https://link.springer.com/static/c4a417b97a76cc2980e3c25e2271af3129e08bbe/images/pdf-preview/spacer.gif)
-
Article
Improved reproducibility of AiGalnAs laser threshold by InP substrate deoxidation under phosphorous flux
When AIGalnAs laser structures are grown by molecular beam epitaxy on InP, the substrate deoxidation procedure is found to influence the quality of the structure: the laser threshold current densities are foun...