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  1. No Access

    Article

    Electromagnetic field confined and tailored with a few air holes in a photonic-crystal fiber

    Conventional and scanning near-field optical microscopy techniques are cross referenced to femtosecond nonlinear-optical measurements and finite-element numerical simulations to visualize and analyze a strong ...

    A. M. Apetrei, J. M. Moison, J. A. Levenson, M. Foroni, F. Poli… in Applied Physics B (2005)

  2. No Access

    Article

    Evaluation of a highly nonlinear microstructured optical fiber by near-field scanning optical microscopy and simulations: nonlinear coefficient and coupling losses

    We report on the evaluation of a microstructured optical fiber (MOF) designed for non-linear signal processing applications, i.e., with a very small guided mode (waist ∼1 μm). Calculations predict an intrinsic...

    J.M. Moison, A.M. Apetrei, J.A. Levenson, G. Mélin, S. Lempereur… in Applied Physics B (2005)

  3. No Access

    Article

    Improved reproducibility of AiGalnAs laser threshold by InP substrate deoxidation under phosphorous flux

    When AIGalnAs laser structures are grown by molecular beam epitaxy on InP, the substrate deoxidation procedure is found to influence the quality of the structure: the laser threshold current densities are foun...

    J. C. Harmand, E. Idiart-Alhor, J. M. Moison, F. Barthe in Journal of Electronic Materials (1997)

  4. No Access

    Chapter

    Nucleation and Growth of InAs Islands on GaAs: An Optical Study

    The observation, as early as 19851–3, of intense photoluminescence (PL) from small InAs clusters in GaAs grown by molecular beam epitaxy (MBE) has opened an outstanding route toward the production of device compa...

    J. M. Gerard, J. B. Genin, J. Lefebvre… in Low Dimensional Structures Prepared by Epi… (1995)

  5. No Access

    Article

    Elastic Misfit Strain Relaxation in Highly Strained InAs Dots on GaAs as Studied by Tem, AFM and VFF Atomistic Calculations

    The deposition of InAs on GaAs results, above a 1.75 monolayer coverage, in the formation of dots on a residual 2D wetting layer. Atomic force microscopy (AFM) measurements show that these dots are in the quan...

    Y. Androussi, P. François, A. Lefebvre, C. Priester… in MRS Online Proceedings Library (1994)

  6. No Access

    Chapter and Conference Paper

    Two-Photon Photoemission in Semiconductors

    Two-quantum photoemission is a process in which twice the photon energy is transferred to the emitted photoelectron. In two-photon photoemission, this transfer is obtained by successive photoexcitations. The t...

    J. M. Moison in Semiconductor Interfaces (1987)

  7. No Access

    Chapter and Conference Paper

    Build-up and Characterization of “Artificial” Surfaces for III—V Compound Semiconductors

    With molecular-beam epitaxy, we can now build on a given material monolayer-thin over layers, which give to its surface structural and electronic properties different from its natural ones. The performances an...

    J. M. Moison in Semiconductor Interfaces (1987)

  8. No Access

    Chapter and Conference Paper

    Surface Processes in Semiconductors Under Pulsed Laser Excitation

    Intense pulsed laser excitation of a semiconductor above its band gap induces many surface-related effects, most of them highly non-linear, such as reconstruction, photolysis, migration, defect annealing, part...

    J. M. Moison, M. Bensoussan in Surface Studies with Lasers (1983)

  9. No Access

    Article

    Dynamical NL optics, bistability

    A. Miller, D. A. B. Miller, M. Bensoussan, J. M. Moison… in Applied Physics B (1982)