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within J. M. Moison Remove this filter Characterization and Evaluation of Materials Remove this filter

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  1. No Access

    Article

    Improved reproducibility of AiGalnAs laser threshold by InP substrate deoxidation under phosphorous flux

    When AIGalnAs laser structures are grown by molecular beam epitaxy on InP, the substrate deoxidation procedure is found to influence the quality of the structure: the laser threshold current densities are foun...

    J. C. Harmand, E. Idiart-Alhor, J. M. Moison, F. Barthe in Journal of Electronic Materials (1997)

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    Chapter

    Nucleation and Growth of InAs Islands on GaAs: An Optical Study

    The observation, as early as 19851–3, of intense photoluminescence (PL) from small InAs clusters in GaAs grown by molecular beam epitaxy (MBE) has opened an outstanding route toward the production of device compa...

    J. M. Gerard, J. B. Genin, J. Lefebvre… in Low Dimensional Structures Prepared by Epi… (1995)

  3. No Access

    Article

    Elastic Misfit Strain Relaxation in Highly Strained InAs Dots on GaAs as Studied by Tem, AFM and VFF Atomistic Calculations

    The deposition of InAs on GaAs results, above a 1.75 monolayer coverage, in the formation of dots on a residual 2D wetting layer. Atomic force microscopy (AFM) measurements show that these dots are in the quan...

    Y. Androussi, P. François, A. Lefebvre, C. Priester… in MRS Online Proceedings Library (1994)