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  1. No Access

    Article

    Study of impurities diffusion in Al2O3/GaN/AlxGa1−xN hetero-structures

    Multilayer GaN/AlxGa1−xN structures were grown on a sapphire substrate using metalorganic chemical vapor deposition at atmospheric pressure. The impurities diffusion was studied using secondary ion mass spectrome...

    J. Laifi, A. Bchetnia… in Journal of Materials Science: Materials in… (2023)

  2. No Access

    Article

    (001) and (11n)n = 1,3 GaAs substrate orientations for growth of GaN layers by AP-MOVPE: impact of GaN buffer layer thickness

    The impact of GaN buffer layer thickness on the properties of GaN films grown by MOVPE on (001), (113), and (111) GaAs substrate orientations were investigated. GaN buffer layers with thickness of dBL = 65 nm and...

    J. Laifi, A. Bchetnia in Journal of Materials Science: Materials in Electronics (2022)