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  1. No Access

    Article

    Effective Dielectric Loss Reduction and Enhanced Dielectric Temperature Stability of (1−x)BaFe0.5Nb0.5O3-xBiCu0.75W0.25O3 Ceramics

    In the present study, a series of lead-free ceramics (1−x)BaFe0.5Nb0.5O3-xBiCu0.75W0.25O3 (BFN-xBCW) were synthesized using a solid-state reaction method. The crystallization of all samples in the cubic structure...

    Manel Amara, J. Hellara, J. Laifi… in Journal of Inorganic and Organometallic Po… (2024)

  2. No Access

    Article

    Characterization of Mechanical and Radiation Shielding Ability of CdO - SiO2 - B2O3 - MoO3 - LiF Glasses

    The successful synthesis of the novel composition glass system with the empirical formula (9CdO + 11SiO2 + 64B2O3 +(2-x) LiF +(14+x) MoO3 for x = 0, 0.5, 1, 1.5, and 2 mole %) has been fabricated. The density inc...

    J. Laifi, Talal M. Althagafi, Essam H. Ibrahim, Hamed A. Ghramh… in Silicon (2024)

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    Article

    Study of impurities diffusion in Al2O3/GaN/AlxGa1−xN hetero-structures

    Multilayer GaN/AlxGa1−xN structures were grown on a sapphire substrate using metalorganic chemical vapor deposition at atmospheric pressure. The impurities diffusion was studied using secondary ion mass spectrome...

    J. Laifi, A. Bchetnia… in Journal of Materials Science: Materials in… (2023)

  4. No Access

    Article

    Critical exponents and magnetic entropy change across the continuous magnetic transition in (La, Pr)-Ba manganites

    The critical behavior and magnetocaloric effect (MCE) in the perovskite system La0.7−xPrxBa0.3MnO3 (x = 0.05, and 0.15) have been carefully investigated via dc-magnetization measurement. With the increase in Pr-d...

    Anowar Tozri, R. Kamel, W. S. Mohamed, J. Laifi, E. Dhahri, E. K. Hlil in Applied Physics A (2022)

  5. No Access

    Article

    (001) and (11n)n = 1,3 GaAs substrate orientations for growth of GaN layers by AP-MOVPE: impact of GaN buffer layer thickness

    The impact of GaN buffer layer thickness on the properties of GaN films grown by MOVPE on (001), (113), and (111) GaAs substrate orientations were investigated. GaN buffer layers with thickness of dBL = 65 nm and...

    J. Laifi, A. Bchetnia in Journal of Materials Science: Materials in Electronics (2022)

  6. No Access

    Article

    Impact of Carrier Gas on the GaN Layers Properties Grown on (001) and (11n) GaAs Substrates by AP-MOVPE: Comparative Study

    The impact of carrier gas on the GaN layers properties grown by atmospheric pressure metal-organic vapor-phase epitaxy (AP-MOVPE) on (001) and (11n) GaAs substrates were investigated. The Arrhenius plots of growt...

    J. Laifi, A. Bchetnia in Semiconductors (2020)