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Article
Sb surfactant-mediated epitaxy of Ge on Si(113) studied by AFM, SEM and GIXRD
We have investigated the Sb surfactant-mediated growth of Ge on Si(113) over the temperature range from 500°C to 700°C. The surface morphology, film thickness, interface roughness and strain state of the films...
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Article
X-ray standing wave investigations of Si dopant incorporation in GaN
The synchrotron radiation technique of x-ray standing waves (XSW), which allows to directly obtain structural and element-specific data, was successfully used for the investigation of the dopant site distribut...