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  1. No Access

    Article

    Sb surfactant-mediated epitaxy of Ge on Si(113) studied by AFM, SEM and GIXRD

    We have investigated the Sb surfactant-mediated growth of Ge on Si(113) over the temperature range from 500°C to 700°C. The surface morphology, film thickness, interface roughness and strain state of the films...

    T. Clausen, J. I. Flege, Th. Schmidt, Jens Falta in MRS Online Proceedings Library (2006)

  2. No Access

    Article

    X-ray standing wave investigations of Si dopant incorporation in GaN

    The synchrotron radiation technique of x-ray standing waves (XSW), which allows to directly obtain structural and element-specific data, was successfully used for the investigation of the dopant site distribut...

    M. Siebert, Th. Schmidt, J. I. Flege, J. Zegenhagen… in MRS Online Proceedings Library (2005)