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    Article

    Photoluminescence properties of heavily doped heterostructures based on (Al x Ga1 − x As)1 − y Si y solid solutions

    It has been established that the photoluminescence spectra of heavily doped heterostructures based on Al x Ga1 − x As)1 − y Si ...

    P. V. Seredin, E. P. Domashevskaya, V. E. Ternovaya… in Physics of the Solid State (2013)

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    Article

    X-ray diffraction studies of heterostructures based on solid solutions Al x Ga1 − x As y P1 − y : Si

    The growth of MOCVD-hydride epitaxial heterostructures based on ternary solid solutions Al x Ga1−x As heavily doped with phosphorus and silicon has been s...

    P. V. Seredin, V. E. Ternovaya, A. V. Glotov, A. S. Len’shin… in Physics of the Solid State (2013)