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    Structural and optical study of GaMnAs/GaAs

    GaMnAs/GaAs was obtained with mass-analyzed low energy dual ion beam depostion technique with Mn ion energy of 1000 eV and a dose of 1.5 × 1018 Mn+/cm2 at the substrate temperature of 400°C and was annealed at 84...

    Junling Yang, Nuofu Chen, **aoling Ye, Hongjia He in Journal of Materials Science (2004)