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    Article

    Structural and optical study of GaMnAs/GaAs

    GaMnAs/GaAs was obtained with mass-analyzed low energy dual ion beam depostion technique with Mn ion energy of 1000 eV and a dose of 1.5 × 1018 Mn+/cm2 at the substrate temperature of 400°C and was annealed at 84...

    Junling Yang, Nuofu Chen, **aoling Ye, Hongjia He in Journal of Materials Science (2004)

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    Article

    Properties of GaAs single crystals grown by molecular beam epitaxy at low temperatures

    Properties of GaAs single crystals grown at low temperatures by molecular beam epitaxy (LTMBE GaAs) have been studied. The results show that excessive arsenic atoms of about 1020 cm−3 exist in LTMBE GaAs in the f...

    Nuofu Chen, Hongjia He, Yutian Wang, Lanying Lin in Science in China Series A: Mathematics (1997)