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Article
Open AccessNovel Approach to Improve the Optical Performance by Machining Process Without Surface Finishing
With the increase in dimensions of optical elements in addition to ever rising demand for aspherical optics, the millimeter-scale periodic waviness that is naturally produced by machining (such as diamond turn...
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Article
RF Loss Characteristics of Coplanar Waveguide Employing Chemically Modified Graphene on Flexible Substrates
In this work, a coplanar waveguide employing chemically modified graphene was fabricated on a polyethylene terephthalate (PET) substrate and its RF loss characteristics were investigated. According to the re...
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Article
Electrical properties of Mg x Zn1−x O thin films deposited by using RF magnetron co-sputtering with ZnO and Mg0.3Zn0.7O targets
We successfully deposited hexagonal wurtzite Mg x Zn1−x O (0 ≤ x ≤ 0.18) films on Si substrates by using RF magnetron co-sputtering with ZnO and M...
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Article
Effects of in content on the microstructure and the roughness of ZnO:In films
We investigated the changes in the preferred orientation and microstructure of ZnO:In films with increasing In content. ZnO and ZnO:In films with In contents of up to 50 at.% were deposited on Si (111) substra...
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Article
Stability characteristics of gallium-doped zinc-tin-oxide thin-film transistors fabricated using a sol-gel method
We investigated the incorporation of Ga into zinc-tin-oxide (ZTO) thin-film transistors (TFTs) and assessed the TFTs’ electrical and stability properties. The Ga-doped ZTO (ZTO:Ga) thin films were deposited on...
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Article
Effects of Mg incorporation by co-sputtering into the ZnO channel layer of thin-film transistors
We fabricated a series of ZnO-based thin-film transistors (TFTs) in which the Mg composition ratio in the active layer was varied by controlling the RF power applied to the ZnO and the Mg0.3Zn0.7O targets. Mg ...
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Article
Effect of buffer layers on the structural properties of PLD-grown Mg0.5Zn0.5O films on c-sapphire
This study investigated the growth conditions required for growing single-phase hexagonal Mg0.5Zn0.5O epitaxial thin-film layers over a variety of buffer layers, including ZnO, MgO, or Mg x ...
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Article
Effect of reactive gases in an atmospheric-pressure plasma for dye adsorption on ZnO nanorods
In this study, ZnO nanorods (NRs) were grown on F-doped SnO2 (FTO)/glass substrate by using a chemical bath deposition (CBD) method. The NRs were crystallized well. The surfaces of the NRs were modified using an ...
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Article
Nanopattern fabrication via AP-UVO exposure of a self-organized block copolymer
Block copolymers were used to achieve nanoscale patterning. Block copolymers, particularly polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA), produce patterns from which one block polymer may be selectiv...
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Article
ZnO nanorod arrays grown on glass substrates below glass transition temperature by metalorganic chemical vapor deposition
High density, well-aligned ZnO nanorods with uniform distributions in their diameters and lengths are successfully prepared on amorphous substrates by metalorganic chemical vapor deposition. The X-ray diffract...
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Article
The behavior of Ti silicidation on Si/SiGe/Si base and its effect on base resistance and fmax in SiGe hetero-junction bipolar transistors
The relation between Ti silicidation and base resistance in SiGe hetero-junction bipolar transistors (HBT) was investigated. The Ti layer deposited on the Si/SiGe/Si base converted to Ti silicide during two-st...
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Article
Low temperature selective Si epitaxy by reduced pressure chemical vapor deposition introducing periodic deposition and etching cycles with SiH4, H2 and HCl
This paper presents the experimental results of selective Si epitaxial growth from 650 °C to 700 °C on (100) silicon wafers with oxide patterns using reduced pressure chemical vapor deposition with the SiH4-HCl-H
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Article
Effects of growth interruption on the evolution of InAs/InP self-assembled quantum dots
We investigated the change in the structural and optical properties of InAs/InP quantum structures during growth interruption (GI) for various times and under various atmospheres in metalorganic chemical vapor...
