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    Epitaxial Lateral Overgrowth of InP on Nanopatterned GaAs Substrates by Metal–Organic Chemical Vapor Deposition

    Epitaxial lateral overgrowth (ELO) of 1.8-μm InP films was performed on nanopatterned GaAs (001) substrates via metal–organic chemical vapor deposition. Parallel SiO2 trenches with a nano-scale width (∼ 170 nm) a...

    Y. B. Fan, J. Wang, J. Li, H. Y. Yin, H. Y. Hu… in Journal of Electronic Materials (2018)