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  1. Article

    Open Access

    Implementation of threshold- and memory-switching memristors based on electrochemical metallization in an identical ferroelectric electrolyte

    The use of an identical electrolyte in electrochemical metallization (ECM)-based neuron and synaptic devices has not yet been achieved due to their different resistive-switching characteristics. Herein, we des...

    Chansoo Yoon, Gwangtaek Oh, Sohwi Kim, Jihoon Jeon, Ji Hye Lee in NPG Asia Materials (2023)

  2. Article

    Open Access

    Gate-tunable photodetector and ambipolar transistor implemented using a graphene/MoSe2 barristor

    Next-generation electronic and optoelectronic devices require a high-quality channel layer. Graphene is a good candidate because of its high carrier mobility and unique ambipolar transport characteristics. How...

    Gwangtaek Oh, Ji Hoon Jeon, Young Chul Kim, Yeong Hwan Ahn in NPG Asia Materials (2021)

  3. Article

    Open Access

    Electrical control of nanoscale functionalization in graphene by the scanning probe technique

    Functionalized graphene is a versatile material that has well-known physical and chemical properties depending on functional groups and their coverage. However, selective control of functional groups on the na...

    Ik-Su Byun, Wondong Kim, Danil W Boukhvalov, Inrok Hwang in NPG Asia Materials (2014)