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Article
Open AccessImplementation of threshold- and memory-switching memristors based on electrochemical metallization in an identical ferroelectric electrolyte
The use of an identical electrolyte in electrochemical metallization (ECM)-based neuron and synaptic devices has not yet been achieved due to their different resistive-switching characteristics. Herein, we des...
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Article
Open AccessGate-tunable photodetector and ambipolar transistor implemented using a graphene/MoSe2 barristor
Next-generation electronic and optoelectronic devices require a high-quality channel layer. Graphene is a good candidate because of its high carrier mobility and unique ambipolar transport characteristics. How...
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Article
Open AccessElectrical control of nanoscale functionalization in graphene by the scanning probe technique
Functionalized graphene is a versatile material that has well-known physical and chemical properties depending on functional groups and their coverage. However, selective control of functional groups on the na...