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Article
Properties of the oxygen vacancy in ZnO
As-grown ZnO bulk crystals and crystals annealed in vacuum, oxygen, or zinc vapour were characterized by electrical, optical and magnetic resonance spectroscopy. The experiments show that the residual carrier ...
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Article
Energetically deep defect centers in vapor-phase grown zinc oxide
Vapor-phase grown ZnO crystals were investigated by means of DLTS measurements. The generation of defect center E4 subsequent to annealing in different ambients was monitored. By conducting electron irradiatio...
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Chapter
Hall Scattering Factor for Electrons and Holes in SiC
The analysis of Hall effect data taken on n-and p-type 4H-/6H-SiC is briefly described and the effect of excited states is demonstrated. The determination of the Hall scattering factor for electrons r ...
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Chapter
Contributions to the Density of Interface States in SiC MOS Structures
Development of metal-oxide-semiconductor (MOS) technology for silicon carbide has attracted great attention because of the unique physical, chemical and, in particular, electronic properties of various crystal...
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Chapter
Phosphorus-Related Centers in SiC
Phosphorus (P) is considered to serve alternatively to nitrogen (N) as a shallow donor in SiC. It is the aim of this paper to report the present status of our knowledge on the optical and electrical properties...
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Chapter
Low-Defect 3C-SiC Grown on Undulant-Si (001) Substrates
Attempts to grow mono-crystalline cubic silicon carbide (3C-SiC) have been made using vapor phase hetero-epitaxial growth with Si [1], TiC [2], and sapphire [3] as substrates, and with bulk growth using the subli...
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Chapter
Vacancy Defects Detected by Positron Annihilation
Point defects in SiC is important in connection with the technological concerns such as ion implantation, crystal growth and radiation tolerance. Among different types of point defects, vacancy defects have be...
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Article
Electrically active centers in Si:Er light-emitting layers grown by sublimation molecular-beam epitaxy
Electrically active centers in light-emitting Si:Er layers grown by sublimation molecular-beam epitaxy (SMBE) on single-crystal Si substrates have been investigated by admittance spectroscopy with temperature ...
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Article
Physical Properties of SiC
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Article
Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals
Experimental and numerical analysis have been performed on the sublimation growth process of SiC bulk crystals. Crystallographic, electrical and optical properties of the grown silicon carbide (SiC) crystals h...
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Article
1.54 μm Photoluminescence and Electroluminescence in Erbium Implanted 6H SiC
Photoluminescence in the neighborhood of 1.54 μm due to the 4I13/2→4I15/2 transitions is observed from 2 K up to 520 K in erbium implanted 6H SiC. The integrated 1.54 µm photoluminescence (PL) intensity is almost...
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Chapter and Conference Paper
Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 6H-SiC
Nitrogen-doped 6H-SiC samples are investigated by Hall and FTIR measurements. Four series of nitrogen-related absorption lines are observed in the spectral regions from 400 to 700 cm−1 and 1000 to 1250 cm−1. The ...
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Chapter and Conference Paper
Recrystallization and Electrical Properties of High-Temperature Implanted (N,Al) 6H-SiC Layers
Ion implantation of aluminum and nitrogen in 6H-SiC is investigated using Rutherford backscattering in the channeling mode (RBS/C) and Hall effect for structural and electrical characterization of the implante...
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Article
Deep level transient spectroscopy on radioactive impurities: Demonstration for Si:111In*
A defect specific analysis technique is introduced that combines the high concentration sensitivity of deep level transient spectroscopy (DLTS) with the radioactive transmutation of probe atoms; this technique...
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Article
Boron-related deep centers in 6H-SiC
6H-silicon carbide layers are grown by a liquid phase epitaxy (LPE) process. The layers are doped with boron either by ion implantation or during the LPE process from a B-doped silicon melt. Deep-level transie...
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Article
Infrared Studies of the Double Acceptor Zinc in Silicon
In the present paper, optical absorption studies on the neutral charge state of the double acceptor zinc in silicon are presented. Measurements were carried out in the mid infrared (MIR) and in the near infrar...
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Article
Photoluminescence study of acceptor-carbon complexes in irradiated silicon: Aluminum-related defects
The paper reports photoluminescence studies on two defects, All at 0.836 eV and Al2 at 0.886 eV, created by aluminum complexing in irradiated silicon after thermal annealing at around 300 °C. The optical data ...
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Article
New oxygen donors in silicon
Oxygen donor traps and oxygen-related precipitates are investigated by deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). The so-called New Donors (ND's) occur after thermal t...
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Article
Complexing of nitrogen with carbon and oxygen in silicon: Photoluminescence studies
We study interactions of nitrogen with carbon and oxygen in crystalline silicon by photoluminescence spectroscopy. Such processes manifest themselves in five photoluminescence lines in the spectral region arou...
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Article
Dlts-Studies on the “New Oxygen Donor” in Heat Treated and Hydrogenated CZ-Grown SI
Cz-grown Si samples containing a high concentration of oxygen are investigated after various processing steps by DLTS. Heat treatments ranging from 500°C–1000°C are performed to study the formation and annihil...
