30 Result(s)
-
Article
Thickness Dependence of the Optical and Electrical Properties of Thin a-Si:H Films
Optical and electrical properties are investigated as a function of thickness for two sets of samples of a-Si:H films deposited respectively by RF magnetron sputtering and by RF glow discharge under the same c...
-
Article
Physical Properties of Annealed a-CSiGe:H Alloys
The optoelectronic properties of the new semiconducting alloy a-CSiGe:H have been studied with particular regard to the dependence upon deposition and annealing temperature. Infrared and electrical results are...
-
Article
Determination of the Energy Gap in Photoconducting Insulators Through Current Noise Measuremen
Measurements of the current noise power spectrum of the photoconducting insulators CdS and CdSe irradiated with monochromatic light of different wavelength A are reported.
-
Article
Diamond-Like Films As Optical And Protective Coatings
Films of amorphous carbon (a-C) and hydrogenated amorphous carbon (a-C:H) are deposited by R.F. Magnetron Sputtering and Sputter Assisted Plasma CVD respectively and their properties are compared. It is found ...
-
Article
Hydrogen Diffusion in a-Sic:H
In order to improve our understanding of the motion of hydrogen and the mechanism by which structural changes occurr, two sets of a-SiC:H samples obtained by glow-discharge at different substrate temperatures ...
-
Article
Photoinduced Noise in Amorphous Semiconductor Films
Electrical noise measurements have been performed on amorphous semiconductor films under irradiation with monochromatic light at different wavelengths. The Power Spectrum Densities (PSDs) of highly photoconduc...
-
Article
Physical properties of amorphous silicon-carbon alloys produced by different techniques
Results of a study of compositional, optical, electrical, and structural properties of hydrogen amorphous silicon carbide (a-SiC:H) prepared, respectively, by glow-discharge (GD) and reactive sputtering (SP) tech...
-
Article
Correlation Between Amorphous Silicon Solar Cell Parameters and Photoinduced Current Noise Power Spectrum
A new technique based on measurements of photoinduced current noise in amorphous silicon solar cells is reported. A l/fn (n~l) component, superimposed to a frequency independent one due to simple shot noise, is a...
-
Article
a-SiC:H Doped with Reactive Gases and with Ion Implantation
Boron doped a-SiC:H samples have been obtained both by gas phase do** during film growth and by using ion implantation. All the implanted samples were annealed under vacuum to remove the damage introduced by...
-
Article
Physical Properties of Undoped and Doped Microcrystalline SiC:H Deposited by PECVD
Experiment results on a systematic investigation on the elemental composition, structural, properties of undoped and doped microcrystalline silicon carbide films deposited by Plasma Enhanced Chemical Vapor Dep...
-
Article
Characterization of the Structure of Carbon Material Through the sp3/sp2 Bonding Ratio Measurements
Hydrogenated amorphous carbon (a-C:H) films have been deposited by sputter assisted plasma chemical vapor deposition (CVD). The relative concentration of sp3 and sp2 hybridized carbon in samples is determined by ...
-
Article
Doped Amorphous and Microcrystalline Silicon Carbide as Wide Band-Gap Material
As a conclusion it can be deduced that in silicon-carbon alloys high optical band-gap can be achieved both in amorphous and in microcrystalline films. In amorphous films the high band-gap is coupled to a diffi...
-
Article
Structure and Morphology of μc-SiC:H Films Produced by Pecvd
Films of μc-SiC:H have been deposited in a conventional PECVD system in order to investigate their structural and morphological properties. They consist of a mixed phase of Si crystallites (50-200 Å), surround...
-
Article
Effect of Boron and Phosphorus Ion Implantation on a-SixC1-x:H Thin Films
Ion implantation of boron and phosphorus in device quality a-SixC1-x:H films deposited by Ultra High Vacuum Plasma Enhanced Chemical Vapor Deposition (UHV PECVD) has been performed. The effects of damage and of d...
-
Article
Effect of Plasma Treatment of the Tco on a-Si Solar Cell Performance
Single junction a-Si p-i-n solar cells have been deposited by an Ultra High Vacuum (UHV) Multichamber PECVD system reaching an efficiency of 10.1% over 0.1 cm2 and 9.7% over 1 cm2. The effect of hydrogen treatmen...
-
Article
Crystallization Processes in Amorphous Hydrogenated Silicon Based Alloys
Amorphous and microcrystalline films of silicon and silicon carbide have been deposited by means of PECVD at low substrate temperature (200°C), with reactive gases highly diluted in H2. Devices quality a-Si:H fil...
-
Article
Crystallinity and Optoelectronic Properties of μc-SiC:H
Samples of μc-Si1−xCx:H with different degree of crystallinity and different carbon content were deposited by Plasma Enhanced Chemical Vapor Deposition and characterized by means of optical, electrical and struct...
-
Article
Thermal and Mechanical Properties of Diamond-Like a-C:H Films
Diamond-like amorphous carbon and hydrogenated amorphous carbon films (DLC) prepared by rf sputtering have been characterized by means of measurements of optical gap, hardness and Young's modulus. Preliminary ...
-
Article
Influence of Carbon on Structural, Optical and Electrical Properties of Microcrystalline Silicon Carbide.
Microcrystalline films of SiC:H have been deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) of SiH4+CH4+H2 mixtures with high power density and high H2 dilution, at variable CH4/SiH4 ratios. Their el...
-
Article
Study on Structural, Electrical and Optical Properties of Microcrystalline Si:H and SiC:H Films
We report results on a study on μc-Si.H and μc-SiC:H films deposited by PECVD. The crystallinity fraction and the crystal sizes have been evaluated by X-ray diffractometry, Raman spectroscopy and Transmission ...
