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    The effects of argon and helium dilution in the growth of nc-Si:H thin films by plasma-enhanced chemical vapor deposition

    We used argon and helium gases to dilute silane to deposit silicon thin films by plasma-enhanced chemical vapor deposition (PECVD). Obtained films were characterized by Raman spectroscopy, spectroscopic ellips...

    F. Chaibi, R. Jemai, H. Aguas, H. Khemakhem, K. Khirouni in Journal of Materials Science (2018)