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Article
Open AccessElectrical manipulation of telecom color centers in silicon
Silicon color centers have recently emerged as promising candidates for commercial quantum technology, yet their interaction with electric fields has yet to be investigated. In this paper, we demonstrate elect...
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Article
Open AccessSpin-acoustic control of silicon vacancies in 4H silicon carbide
Bulk acoustic resonators can be fabricated on the same substrate as other components and can operate at various frequencies with high quality factors. Mechanical dynamic metrology of these devices is challengi...
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Article
Laser writing of spin defects in nanophotonic cavities
High-yield engineering and characterization of cavity–emitter coupling is an outstanding challenge in develo** scalable quantum network nodes. Ex situ defect formation systems prevent real-time analysis, and...
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Article
Hot photoluminescence or Raman scattering?
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Article
Ultrafast all-optical switching by single photons
An as yet outstanding goal in quantum optics is the realization of fast optical nonlinearities at the single-photon level. This would allow for the implementation of optical devices with new functionalities su...
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Article
Large spontaneous emission enhancement in plasmonic nanocavities
Cavity–emitter coupling can enable a host of potential applications in quantum optics, from low-threshold lasers to brighter single-photon sources for quantum cryptography1. Although some of the first demonstrati...
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Article
Strongly correlated photons on a chip
Optical nonlinearities at the single-photon level are key ingredients for future photonic quantum technologies1. Prime candidates for the realization of the strong photon–photon interactions necessary for impleme...
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Article
Analysis of Leakage Currents in AlGaN/GaN Current Aperture Vertical Electron Transistors (CAVETs)
A complete analysis of leakage currents in AlGaN/GaN Current Aperture Vertical Electron Transistors (CAVETs) with regrown aperture and source regions was carried out. The total observed leakage current was fou...
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Chapter
Applications: Catalysis by Nanostructured Materials
The 1999 Nanotechnology Research Directions report included nanoscale catalysis as one aspect of applications of nanotechnology to the energy and chemicals industries [1]. The vision centered on the recognition t...
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Chapter
Applications: Nanophotonics and Plasmonics
Both nanophotonics and plasmonics concern investigations into building, manipulating, and characterizing optically active nanostructures with a view to creating new capabilities in instrumentation for the nano...
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Article
Room-temperature continuous-wave lasing in GaN/InGaN microdisks
Microdisk lasers feature low-loss, high-quality whispering gallery modes1,2,3 that offer the potential for ultralow-threshold lasing4,5,6,7 that is not limited by challenges in mirror fabrication. Here we report ...
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Article
Optical properties of GaN Photonic Crystal Membrane Nanocavities at Blue Wavelengths
We have investigated the design parameters for high-Q photonic-crystal (PC) bandgap modes in the emission wavelengths of InGaN/GaN multiple quantum wells. We demonstrate experimental schemes to realize 2D tria...
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Article
Selection of peptides with semiconductor binding specificity for directed nanocrystal assembly
In biological systems, organic molecules exert a remarkable level of control over the nucleation and mineral phase of inorganic materials such as calcium carbonate and silica, and over the assembly of crystall...
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Chapter
Synthesis and Assembly
The common theme of this WTEC study is the engineering of materials with novel (i.e., improved) properties through the controlled synthesis and assembly of the material at the nanoscale level. The range of app...
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Article
Surface Passivation of GaAs-Based Phemt by Hydrogen Ion Irradiation
Surface passivation is a key issue in compound semiconductor device technology. The high density of surface states on unpassivated surfaces can lead to excessive non-radiative recombination at the surface, aff...
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Article
Limitations to the Bandgap-Selective Photoelectrochemical Etching of GaAs/AlxGa1-xAs Heterostructures
We have used the wet photoelectrochemical (PEC) etch process to demonstrate the selective removal of low aluminum (Al) mole-fraction AlxGa1-xAs layers from those with higher Al mole-fraction. High etch selectivit...
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Article
Downstream Etching of GaAs and InP Using Molecular Chlorine and Chlorine Radicals
The temperature dependent etching of GaAs and InP using both molecular and remote plasma activated Cl2 and HC1 is examined. GaAs etches nearly three times faster in a remotely generated C12 plasma than in a molec...
