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  1. Article

    Open Access

    Carrier dynamics in (Ga,In)(Sb,Bi)/GaSb quantum wells for laser applications in the mid-infrared spectral range

    We present experimental studies on low-temperature ( \(T={4.2}\hbox { K}\) T ...

    E. Rogowicz, J. Kopaczek, M. P. Polak, O. Delorme, L. Cerutti… in Scientific Reports (2022)

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  2. No Access

    Article

    Terahertz Spectroscopy of Two-Dimensional Semimetal in Three-Layer InAs/GaSb/InAs Quantum Well

    The features of terahertz photoluminescence and magnetoabsorption in magnetic fields up to 16 T in threelayer InAs/GaSb/InAs quantum wells with a band structure corresponding to a “two-dimensional semimetal” a...

    S. S. Krishtopenko, S. Ruffenach, F. Gonzalez-Posada, C. Consejo, W. Desrat… in JETP Letters (2019)

  3. No Access

    Chapter

    GaSbBi Alloys and Heterostructures: Fabrication and Properties

    Dilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of bandgap reduction and spin–orbit splitting. The incorporation of Bi into antimonide-based is very attract...

    O. Delorme, L. Cerutti, R. Kudrawiec… in Bismuth-Containing Alloys and Nanostructur… (2019)

  4. No Access

    Article

    Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs “Three-Layer” Gapless Quantum Wells

    Cyclotron resonance spectra in high magnetic fields up to 34 T in InAs/GaSb/InAs “three-layer” quantum wells with gapless Dirac fermions have been studied. In quantizing magnetic fields, an absorption line ass...

    S. Ruffenach, S. S. Krishtopenko, L. S. Bovkun, A. V. Ikonnikov… in JETP Letters (2017)

  5. No Access

    Article

    Non-random Be-to-Zn substitution in ZnBeSe alloys: Raman scattering and ab initio calculations

    We show how the 1-bond ↦ 2-mode percolation behaviour, as observed in the transverse optical (TO) Raman spectra of several A1-xBxC semiconductor (SC) alloys, can be used to detect and to estimate a possible devia...

    O. Pagès, A. V. Postnikov, A. Chafi, D. Bormann… in The European Physical Journal B (2010)

  6. No Access

    Chapter and Conference Paper

    Transmission Electron Microscopy Study of Sb-Based Quantum Dots

    We have investigated the structural properties of InSb quantum dots (QDs) on top of GaSb and embedded in GaSb barrier layers. The InSb QDs were grown by molecular beam epitaxy (MBE) applying conventional growt...

    B Satpati, V Tasco, N Deguffroy, A N Baranov… in Microscopy of Semiconducting Materials 2007 (2008)

  7. No Access

    Article

    Molecular beam epitaxy of ZnxBe1−xSe: Influence of the substrate nature and epilayer properties

    We have studied the heteroepitaxial growth of ZnxBe1−xSe onto Si, GaAs and GaP substrates. By comparing the growth on these different substrates, we showed that lattice-matching is not a sufficient condition to a...

    C. Chauvet, E. Tournié, P. Vennéguès, J. P. Faurie in Journal of Electronic Materials (2000)

  8. No Access

    Article

    New developments in the heteroepitaxial growth of Be-chalcogenides based semiconducting alloys

    We have studied the heteroepitaxial growth of Zn(Mg)BeSe alloys on both GaAs and Si substrates. X-ray measurements show that ZnMgBeSe quaternary alloys can be grown with a high structural quality on GaAs(001)....

    C. Chauvet, V. Bousquet, E. Tournié, J. P. Faurie in Journal of Electronic Materials (1999)

  9. No Access

    Article

    Time-resolved photoluminescence and steady-state optical investigations of a Zn1−x Cd x Se/ZnSe quantum well

    We report on time-integrated and time-resolved optical experiments performed on a 26 Å thick Zn0.85Cd0.15Se/ZnSe quantum well, for temperatures in the 10–200 K range. Excitation spectroscoy allows an estimation o...

    E. Deleporte, J. Martinez-Pastor, A. Filoramo, D. Batovski… in Il Nuovo Cimento D (1995)

  10. No Access

    Article

    Virtual-surfactant-induced wetting in strained-layer heteroepitaxy

    We show that surface stoichiometry and growth mode are intimately related for heteroepitaxy of InAs on GaO0.47In0.53As. Under As-stable conditions during molecular beam epitaxy, the high strain of the InAs film i...

    E. Tournié, O. Brandt, K. H. Ploog, M. Hohenstein in Applied Physics A (1993)