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  1. No Access

    Article

    Reaction of aluminum-on-titanium bilayer with GaN: Influence of the Al:Ti atomic ratio

    Backscattering spectrometry, x-ray diffractometry, and scanning electron microscopy have been used to study metallurgically the evolution of 〈GaN〉/Ti(40 nm)/Al(180 nm) and 〈GaN〉/Ti(80 nm)/Al(150 nm) metal cont...

    S. M. Gasser, E. Kolawa, M. -A. Nicolet in Journal of Electronic Materials (1999)

  2. Article

    Copper Metallization Layers on Bismuth-Telluride Substrates: Effectiveness of Cr, Pt, and Ta40Si14 N46 Thin Films as Diffusion Barriers

    For power-chip cooling devices based on Bi2Te3 thick films, copper is a desirable choice as metallic conductor, because it has high thermal conductivity and low electrical resistivity. On the other hand, Cu shows...

    T. Kacsich, M. A. Nicolet, E. Kolawa, J. P. Fleurial in MRS Online Proceedings Library (1998)

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  3. No Access

    Article

    Full Field Measurements of Curvature using Coherent Gradient Sensing: Application to Thin Film Characterization

    This paper introduces coherent gradient sensing (CGS) as an optical, full-field, real-time, non-intrusive and non-contact technique for measurement of curvature and curvature changes in thin film and micro-mec...

    A. J. Rosakis, R. P. Singh, Y. Tsuji, E. Kolawa… in MRS Online Proceedings Library (1997)

  4. No Access

    Article

    Effect of Si in reactively sputtered Ti-Si-N films on structure and diffusion barrier performance

    Si23N43 (b3) and Ti35Si13N52 (c3), are synthesized by reactively sputtering a Ti5Si3 or a Ti3Si target, respectively. The silicon-lean film (c3) has a columnar structure closely resembling that of TiN. As a diffu...

    X. Sun, E. Kolawa, S. Im, C. Garland, M.-A. Nicolet in Applied Physics A (1997)

  5. No Access

    Article

    Temperature Dependence of Resistivity for TiN and Ti-Si-N Films

    We have measured by the four-point probe or Van der Pauw technique the resistivity in vacuum from 77 K to 873 K or 1073 K of Ti34Si23N43 and Ti53N47. These films were reactively sputter-deposited on oxidized sili...

    U. Gottlieb, X. Sun, E. Kolawa, M.-A. Nicolet in MRS Online Proceedings Library (1996)

  6. No Access

    Article

    Solid-state reaction of Pt thin film with single-crystal (001) β–SiC

    Thermally induced solid-state reactions between a 70 nm Pt film and a single-crystal (001) β-SiC substrate at temperatures from 300 °C to 1000 °C for various time durations are investigated by 2 MeV He backsca...

    J. S. Chen, E. Kolawa, M-A. Nicolet, R. P. Ruiz, L. Baud… in Journal of Materials Research (1994)

  7. No Access

    Article

    Stable Pt/Ge/Au Ohmic Contact to n-GaAs with a Ta-Si-N Barrier

    A Pt/Ge/Au contact of the structure: <n-GaAs>/Pt(17nm)/Ge(25nm)/Au(43nm), overlaid with a Ta-Si-N barrier layer and a Au metallization layer has a contact resistivity, ρc, of 3.7×10−6 Ωcm2 after annealing at 450°...

    J. S. Chen, E. Kolawa, R. P. Ruiz, M-A. Nicolet in MRS Online Proceedings Library (1993)

  8. No Access

    Article

    Ta-Si-N and Si3N4 Encapsulants for InP

    Thin films of sputtered, amorphous Ta36Si14N50 (a metallic conductor) and Si3N4 (an insulator) were evaluated as encapsulants for (100)-oriented InP substrates. Thicknesses of both films were approximately 100 nm...

    J. S. Reid, R. P. Ruiz, E. Kolawa, J. S. Chen, J. Madok… in MRS Online Proceedings Library (1992)

  9. No Access

    Article

    Thermodynamics of (Cr, Mo, Nb, Ta, V, or W)–Si–Cu ternary systems

    The room-temperature and 700 °C tie lines of the early transition metal–Si–Cu ternary systems have been calculated for the metals Cr, Mo, Nb, Ta, V, and W. The tie lines are determined by considering only bina...

    J. S. Reid, E. Kolawa, M.-A. Nicolet in Journal of Materials Research (1992)

  10. No Access

    Article

    Stress and Resistivity in Reactively Sputtered Amorphous Metallic Ta-Si-N Films

    We have measured the stress and the electrical resistivity of Ta-Si-N films deposited in an rf magnetron system by reactive sputtering of Ta5 Si3 target in an Ar-N2 mixture. The stress was determined by measuring...

    C.. -K. Kwok, E. Kolawa, M-A. Nicolet, Ray C. Lee in MRS Online Proceedings Library (1991)

  11. No Access

    Article

    Interfacial Reactions of Ag Thin Films On (001) GaAs

    Ag thin films of 90 nm in thickness were deposited on (001) GaAs substrates, with or without an amorphous Ta-Si-N cap layer on top. All samples were annealed at 550°C for 30 min in an Ar flow. The interaction ...

    J. S. Chen, E. Kolawa, R. P. Ruiz, M-A. Nicolet in MRS Online Proceedings Library (1991)

  12. No Access

    Article

    Characterization of the Al/RuO2 Interface Upon Thermal Annealing

    We have characterized the Al/RuO2 interface after annealing at temperatures in the range 450°C–550°C for durations up to several hours by backscattering spectrometry, cross-sectional transmission electron microsc...

    Quat T. Vu, E. Kolawa, M-A. Nicolet in MRS Online Proceedings Library (1990)

  13. No Access

    Article

    Applications of Amorphous Ti-P-N Diffusion Barriers in Silicon Metallization

    Thin films of amorphous TiP and TiPN2 alloys were deposited by sputtering of a TiP target in an Ar and N2/Ar mixture, respectively. These alloy films were tested as diffusion barriers between Al and Si as well as...

    E. Kolawa, L. Halperin, P. Pokela, Quat T. Vu, C.W. Nieh in MRS Online Proceedings Library (1990)

  14. No Access

    Article

    Chemical Stability of Vb2 and ZrB2 with Aluminum

    The chemical stability of boride thin films with aluminum is investigated. Only two diborides, VB2 and HfB2 have a positive heat of reaction which makes them potential candidates for thermodynamically stable diff...

    L.E. Halperin, E. Kolawa, Z. Fu, M-A. Nicolet in MRS Online Proceedings Library (1990)

  15. No Access

    Article

    Stable Solid-Phase Ohmic Contacts to n-GaAs with Diffusion Barriers

    Contacts to GaAs substrates with n-type epilayers formed by GaAs/Ni/Ge/WN/Au, GaAs/Ni/Ge/Ni/WN/Au and GaAs/Ge/ Ni/WN/Au systems were investigated. Ohmic contacts in these systems were formed by a solid-phase r...

    E. Kolawa, C. W. Nieh, W. Flick, J. Molarius… in MRS Online Proceedings Library (1988)

  16. No Access

    Article

    Thin-Film Encapsulants for Thermal Processing of GaAs

    During heat treatment of GaAs there is a tendency for arsenic to evaporate. This process can have deleterious consequences and must be controlled during the annealing of GaAs by using encapsulants. In this wor...

    J. M. Molarius, E. Kolawa, K. Morishitaal, E. T S. Pan… in MRS Online Proceedings Library (1988)

  17. No Access

    Article

    Microstructure of reactively sputtered oxide diffusion barriers

    Molybdenum oxide (Mo1-x O x ) and ruthenium oxide (RuO2) films were prepared by rf reactive sputtering of Mo or Ru targets in an O2/Ar plasma. Both films ...

    E. Kolawa, C. W. Nieh, F. C. T. So, M. -A. Nicolet in Journal of Electronic Materials (1988)

  18. No Access

    Article

    Properties of reactively sputtered Mo1−x O x films

    Molybdenum oxide (Mo1−xOx) films were prepared by reactive rf sputtering of a Mo target in O2/Ar plasma. The dependence of film properties on various sputtering parameters is investigated. The atomic percentage o...

    F. C. T. So, E. Kolawa, S. C. W. Nieh, X. -A. Zhao, M. -A. Nicolet in Applied Physics A (1988)

  19. No Access

    Article

    Amorphous W-Zr Films as Diffusion Barriers Between Al and Si

    Cosputtered W70Zr30 and W40Zr60 films are investigated as diffusion barriers between Al and Si. W-Zr alloys of both compositions were determined by x-ray diffraction to crystallize at 900°C on Al2O3 substrates. O...

    F. C. T. So, X.-A. Zhao, E. Kolawa, J. L. Tandon… in MRS Online Proceedings Library (1985)