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  1. No Access

    Article

    Exciton Structure and Recombination Dynamics in GaSe Crystals

    At present, the available experimental data on the optical properties of layered III–VI monochalcogenide compounds are scattered and somewhat contradictory, although they are the parent materials for promising...

    M. V. Rakhlin, E. A. Evropeitsev… in Bulletin of the Russian Academy of Science… (2023)

  2. No Access

    Article

    Two-Dimensional Excitons in Multiple GaN/AlN Monolayer Quantum Wells

    The decay kinetics of low-temperature exciton photoluminescence in a heterostructure with multiple GaN/AlN monolayer quantum wells, which is prepared by molecular beam epitaxy, is studied. Measured radiation d...

    E. A. Evropeitsev, Yu. M. Serov, D. V. Nechaev, V. N. Jmerik, T. V. Shubina… in JETP Letters (2021)

  3. No Access

    Article

    Förster Energy Transfer in Arrays of Epitaxial CdSe/ZnSe Quantum Dots Involving Bright and Dark Excitons

    Using time-resolved photoluminescence (PL) spectroscopy, we establish the presence of the Förster energy transfer mechanism between two arrays of epitaxial CdSe/ZnSe quantum dots (QDs) of different sizes. The ...

    T. N. Mikhailov, E. A. Evropeitsev, K. G. Belyaev… in Physics of the Solid State (2018)

  4. Article

    Open Access

    Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

    We report on the thorough investigation of light emitting diodes (LEDs) made of core-shell nanorods (NRs) with InGaN/GaN quantum wells (QWs) in the outer shell, which are grown on patterned substrates by metal...

    Y. Robin, S. Y. Bae, T. V. Shubina, M. Pristovsek, E. A. Evropeitsev… in Scientific Reports (2018)

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  5. No Access

    Article

    Molecular beam epitaxy of ZnSSe/CdSe short-period superlattices for III–V/II–VI multijunction solar cells

    Results on the molecular-beam epitaxy growth of short-period alternately-strained ZnS x Se1−x /CdSe superlattices which are pseudomorphic to GaAs ...

    S. V. Sorokin, S. V. Gronin, I. V. Sedova, G. V. Klimko… in Semiconductors (2015)

  6. No Access

    Article

    Photoluminescence of porous silicon saturated with tungsten-tellurite glass with rare-earth metal impurities

    It has been shown that the presence of silicon nanoparticles in a layer of porous silicon saturated with tungsten-tellurite glass causes an increase in the photoluminescence quantum efficiency of erbium (1530 ...

    E. S. Demidov, A. N. Mikhaylov, A. I. Belov, M. V. Karzanova… in Physics of the Solid State (2011)