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  1. No Access

    Article

    Low-Temperature, Strong SiO2-SiO2 Covalent Wafer Bonding for III–V Compound Semiconductors-to-Silicon Photonic Integrated Circuits

    We report a low-temperature process for covalent bonding of thermal SiO2 to plasma-enhanced chemical vapor deposited (PECVD) SiO2 for Si-compound semiconductor integration. A record-thin interfacial oxide layer o...

    Di Liang, Alexander W. Fang, Hyundai Park… in Journal of Electronic Materials (2008)

  2. Article

    Open Access

    High-Temperature Thermoelectric Characterization of III–V Semiconductor Thin Films by Oxide Bonding

    A device fabrication and measurement method utilizing a SiO2–SiO2 covalent bonding technique is presented for high-temperature thermoelectric characterization of thin-film III–V semiconductor materials that suffe...

    Je-Hyeong Bahk, Gehong Zeng, Joshua M. O. Zide, Hong Lu… in Journal of Electronic Materials (2010)

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  3. No Access

    Article

    Integrated Optoelectronic Devices on Silicon

    Silicon (Si) has been the dominating material platform of microelectronics over half century. Continuous technological advances in circuit design and manufacturing enable complementary metal-oxide semiconducto...

    Di Liang, John E. Bowers in MRS Online Proceedings Library (2012)

  4. No Access

    Article

    Hybrid III-V-on-Silicon Microring Lasers

    Hybrid silicon laser is a promising solution to enable high-performance light source on large-scale, silicon-based photonic integrated circuits (PICs). As a compact laser cavity design, hybrid microring lasers...

    Di Liang, Géza Kurczveil, Marco Fiorentino… in MRS Online Proceedings Library (2013)